Infrared and Laser Engineering, Volume. 49, Issue 3, 0305002(2020)

Thermal damage of monocrystalline silicon irradiated by long pulse laser

Ming Guo1...2, Yongxiang Zhang3,*, Wenying Zhang1,2, and Hong Li12 |Show fewer author(s)
Author Affiliations
  • 1Institute for Interdisciplinary Quantum Information Technology, Jilin Engineering Normal University, Changchun 130052, China
  • 2Jilin Engineering Laboratory for Quantum Information Technology, Changchun 130052, China
  • 3Business Branch, College of Optical and Electronical Information, Changchun University of Science and Technology, Changchun 130000, China
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    References(10)

    [7] L Zhang, X Ni, J Lu. Numerical simulation of vaporization effect of long pulsed laser interaction with silicon. Optics and Precision Engineering, 19, 11-19(2011).

    [8] Z Li, H Zhang, Z Shen. Time-resolved temperature measurement and numerical simulation of millisecond laser irradiated silicon. Journal of Applied Physics, 114, H39-H41(2013).

    [9] C B Zhang, J D Zhang, H G Wang. Damage characteristic of microwave pulse injected on Si bipolar transistor. Journal of National University of Defense Technology, 1-4(2015).

    [10] Y X Cui, X Y Nu, C L Wang. Numerical analysis of CW laser damage in Germanium. Journal of Applied Optics, 19, 267-271(2011).

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    Ming Guo, Yongxiang Zhang, Wenying Zhang, Hong Li. Thermal damage of monocrystalline silicon irradiated by long pulse laser[J]. Infrared and Laser Engineering, 2020, 49(3): 0305002

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    Paper Information

    Received: Nov. 2, 2019

    Accepted: --

    Published Online: Apr. 22, 2020

    The Author Email: Zhang Yongxiang (laserqit@sina.com)

    DOI:10.3788/IRLA202049.0305002

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