Infrared and Laser Engineering, Volume. 49, Issue 3, 0305002(2020)

Thermal damage of monocrystalline silicon irradiated by long pulse laser

Ming Guo1...2, Yongxiang Zhang3,*, Wenying Zhang1,2, and Hong Li12 |Show fewer author(s)
Author Affiliations
  • 1Institute for Interdisciplinary Quantum Information Technology, Jilin Engineering Normal University, Changchun 130052, China
  • 2Jilin Engineering Laboratory for Quantum Information Technology, Changchun 130052, China
  • 3Business Branch, College of Optical and Electronical Information, Changchun University of Science and Technology, Changchun 130000, China
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    Figures & Tables(9)
    Experimental system for damage of monocrystalline silicon by long pulse laser
    Evolution of relationship between center temperature of monocrystalline silicon irradiated by lasers and time
    Relationship between the peak temperature of center point of monocrystalline silicon laser irradiation and the energy density and pulse width
    Temperature variation and with energy density and pulse width
    Cleavage damage structure of monocrystalline silicon
    Metallographic structure of multi-effect coupling damage in monocrystalline silicon
    Peak corrosion damage structure of monocrystalline silicon
    Relationships between damage depth and laser energy density
    Relationship between the etching depth of monocrystalline silicon and number of pulse
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    Ming Guo, Yongxiang Zhang, Wenying Zhang, Hong Li. Thermal damage of monocrystalline silicon irradiated by long pulse laser[J]. Infrared and Laser Engineering, 2020, 49(3): 0305002

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    Paper Information

    Received: Nov. 2, 2019

    Accepted: --

    Published Online: Apr. 22, 2020

    The Author Email: Zhang Yongxiang (laserqit@sina.com)

    DOI:10.3788/IRLA202049.0305002

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