Journal of Terahertz Science and Electronic Information Technology , Volume. 19, Issue 2, 352(2021)

Photocurrent effect of PDSOI NMOS device by laser simulation

REN Shangqing1...2,*, WANG Bobo1,2, JIANG Chunsheng1,2, ZHONG Le1,2, SUN Peng1,2, and XIE Lei12 |Show fewer author(s)
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    References(14)

    [2] [2] KUO J B,SU K W. CMOS VLSI engineering[M]. Berlin:Springer, 1998.

    [3] [3] KUO J B,LIN S C. Fundamentals of SOI CMOS circuits[M]. [S.l.]:John Wiley & Sons, Inc., 2002.

    [4] [4] SCHWANK J R,SHANEYFELT M R,FLEETWOOD D M,et al. Radiation effects in MOS oxides[J]. IEEE Transactions on Nuclear Science, 2008,55(4):1833-1853.

    [5] [5] COLINGE J P. Silicon on insulator technology:materials to VLSI[M]. 2nd ed. Berlin:Springer, 1997.

    [6] [6] SCHWANK J R,FERLET-CAVROIS V,SHANEYFELT M R,et al. Radiation effects in SOI technologies[J]. IEEE Transactions on Nuclear Science, 2003,50(3):522-538.

    [7] [7] BARNABY H J,MCLAIN M L,ESQUEDA I S,et al. Modeling ionizing radiation effects in solid state materials and CMOS devices[J]. IEEE Transactions on Circuits & Systems I:Regular Papers, 2009,56(8):1870-1883.

    [8] [8] ELLIS T D,KIM Y D. Use of a pulsed laser as an aid to transient upset testing of I2L LSI micro circuits[J]. IEEE Transactions on Nuclear Science, 1978,25(6):1489-1493.

    [11] [11] SKOROBOGATOV P K,NIKIFOROV A Y,EGOROV A N. Optimization of laser irradiation parameters for simulation of a transient radiation response in thin-film silicon-based microcircuits[J]. Russian Microelectronics, 2015(44):8-21.

    [14] [14] NIKIFOROV A Y,SKOROBOGATOV P K. Dose rate laser simulation tests adequacy: shadowing and high intensity effects analysis[J]. IEEE Transactions on Nuclear Science, 1996,43(6):3115-3121.

    [15] [15] WIRTH J L,ROGERS S C. The transient response of transistors and diodes to ionizing radiation[J]. IEEE Transactions on Nuclear Science, 1964,11(5):24-38.

    [16] [16] HOFFMAN J R,HALL W E,DUNN D E. Modeling transient radiation effects in power MOSFETs[J]. IEEE Transactions on Nuclear Science, 1987,34(6):1381-1385.

    [17] [17] LIANG Kun,SUN Peng,LI Mo,et al. Laser simulation technology research of transient dose rate effect in SOI device[J]. Atomic Energy Science and Technology, 2017,51(1):187-192.

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    REN Shangqing, WANG Bobo, JIANG Chunsheng, ZHONG Le, SUN Peng, XIE Lei. Photocurrent effect of PDSOI NMOS device by laser simulation[J]. Journal of Terahertz Science and Electronic Information Technology , 2021, 19(2): 352

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    Paper Information

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    Received: Nov. 7, 2019

    Accepted: --

    Published Online: Jul. 16, 2021

    The Author Email: Shangqing REN (renshangqing_mtrc@caep.cn)

    DOI:10.11805/tkyda2019450

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