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Journal of Terahertz Science and Electronic Information Technology , Volume. 19, Issue 2, 352(2021)

Photocurrent effect of PDSOI NMOS device by laser simulation

REN Shangqing1...2,*, WANG Bobo1,2, JIANG Chunsheng1,2, ZHONG Le1,2, SUN Peng1,2, and XIE Lei12 |Show fewer author(s)
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    REN Shangqing, WANG Bobo, JIANG Chunsheng, ZHONG Le, SUN Peng, XIE Lei. Photocurrent effect of PDSOI NMOS device by laser simulation[J]. Journal of Terahertz Science and Electronic Information Technology , 2021, 19(2): 352

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    Received: Nov. 7, 2019

    Accepted: --

    Published Online: Jul. 16, 2021

    The Author Email: Shangqing REN (renshangqing_mtrc@caep.cn)

    DOI:10.11805/tkyda2019450

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology