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Chinese Journal of Quantum Electronics, Volume. 24, Issue 5, 625(2007)

532 nm CW laser induced damage of GaAs materials

Yong-fu LI1、*, Hai-feng QI1, Qing-pu WANG1, Xing-yu ZHANG1, Ze-jin LIU2, Yu-rong WANG1, Aijian Wei1, Wei XIA3, and Sa-sa ZHANG1
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    [1] [1] Amit Garg,Avinashi Kapoor,Tripathi K N. Laser-induced damage studies in GaAs [J].Optics & Laser Technology,2003,35(1): 21-24.

    [2] [2] Jong Tde,Wang Z L,Saris F W. An experimental test of GaAs decomposition due to pulsed laser irradiation [J].Phys. Lett. A,1982,90(3): 147-149.

    [3] [3] Amit Pratap Singh,Avinashi Kapoor,et al. Thermal and mechanical damage of GaAs in picosecond regime [J].Optics & Laser Technology,2001,33(6): 363-369.

    [4] [4] Trelenberg T W,Dinh L N,Saw C K,et al. Femtosecond pulsed-laser ablation of GaAs [J].Applied Surface Science,2004,221(1-4): 364-369.

    [5] [5] Meyer J R,Bartoli F J,Kruer M R. Optical heating in semiconductors [J].Physical Review B,1980,21(4):1559-1568.

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    [1] ZHOU Hai-jiao, SUN Wen-jun, LIU Zhong-yang. Research of Nonlinear Absorption Effect of Pulse Laser Irradiation for GaAs[J]. Acta Photonica Sinica, 2014, 43(11): 1116005

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    LI Yong-fu, QI Hai-feng, WANG Qing-pu, ZHANG Xing-yu, LIU Ze-jin, WANG Yu-rong, Wei Aijian, XIA Wei, ZHANG Sa-sa. 532 nm CW laser induced damage of GaAs materials[J]. Chinese Journal of Quantum Electronics, 2007, 24(5): 625

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    Paper Information

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    Received: Oct. 16, 2006

    Accepted: --

    Published Online: Jun. 13, 2010

    The Author Email: Yong-fu LI (yfLi@mail.sdu.edu.cn)

    DOI:

    CSTR:32186.14.

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology