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Chinese Journal of Quantum Electronics, Volume. 24, Issue 5, 625(2007)

532 nm CW laser induced damage of GaAs materials

Yong-fu LI1、*, Hai-feng QI1, Qing-pu WANG1, Xing-yu ZHANG1, Ze-jin LIU2, Yu-rong WANG1, Aijian Wei1, Wei XIA3, and Sa-sa ZHANG1
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    LI Yong-fu, QI Hai-feng, WANG Qing-pu, ZHANG Xing-yu, LIU Ze-jin, WANG Yu-rong, Wei Aijian, XIA Wei, ZHANG Sa-sa. 532 nm CW laser induced damage of GaAs materials[J]. Chinese Journal of Quantum Electronics, 2007, 24(5): 625

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    Paper Information

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    Received: Oct. 16, 2006

    Accepted: --

    Published Online: Jun. 13, 2010

    The Author Email: Yong-fu LI (yfLi@mail.sdu.edu.cn)

    DOI:

    CSTR:32186.14.

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology