Journals Articles Conferences News About CLP
Submit a paper Email Alert
Search
Search
Articles
Journals
News
Advanced Search
Top Searches
2D MaterialsTransformation opticsQuantum PhotonicsSmall lasersSemiconductor UV PhotonicsSupersymmetric microring laser arrays

Photonics Research, Volume. 6, Issue 8, 794(2018)

Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys

Yuan Yuan1, Jiyuan Zheng1, Yaohua Tan1, Yiwei Peng1, Ann-Kathryn Rockwell2, Seth R. Bank2, Avik Ghosh1, and Joe C. Campbell1、*
Author Affiliations
  • 1Electrical and Computer Engineering Department, University of Virginia, 351 McCormick Rd., Charlottesville, Virginia 22904, USA
  • 2Electrical and Computer Engineering Department, University of Texas at Austin, 1616 Guadalupe St., Austin, Texas 78758, USA
    • show less
    Full TextGet PDF
    Figures&Tables (10)
    Equations (8)
    References (20)
    Cited By (28)
    Tools
    Paper Information
    Topics
    References(20)

    [1] J. C. Campbell. Recent advances in avalanche photodiodes. J. Lightwave Technol., 34, 278-285(2016).

    [2] R. J. McIntyre. Multiplication noise in uniform avalanche photodiodes. IEEE Trans. Electron. Devices, ED-13, 164-168(1966).

    [3] R. B. Emmons. Avalanche‐photodiode frequency response. J. Appl. Phys., 38, 3705-3714(1967).

    [4] M. E. Woodson, M. Ren, S. J. Maddox, Y. Chen, S. R. Bank, J. C. Campbell. Low-noise AlInAsSb avalanche photodiode. Appl. Phys. Lett., 108, 081102(2016).

    [5] M. Ren, S. J. Maddox, M. E. Woodson, Y. Chen, S. R. Bank, J. C. Campbell. AlInAsSb separate absorption, charge, and multiplication avalanche photodiodes. Appl. Phys. Lett., 108, 191108(2016).

    [6] M. Ren, S. J. Maddox, M. E. Woodson, Y. Chen, S. R. Bank, J. C. Campbell. Low excess noise AlxIn1-xAsySb1-y (x: 0.3–0.7) avalanche photodiodes. Conference on Lasers and Electro-Optics (CLEO), STh1G.1(2016).

    [7] A. K. Rockwell, Y. Yuan, A. H. Jones, S. D. March, S. R. Bank, J. C. Campbell. Al0.8In0.2As0.23Sb0.77 avalanche photodiodes. IEEE Photon. Technol. Lett., 30, 1048-1051(2018).

    [8] C. Lenox, P. Yuan, H. Nie, O. Baklenov, C. Hansing, J. C. Campbell, A. L. Holmes, B. G. Streetman. Thin multiplication region InAlAs homojunction avalanche photodiodes. Appl. Phys. Lett., 73, 783-784(1998).

    [9] Y. L. Goh, A. R. J. Marshall, D. J. Massey, J. S. Ng, C. H. Tan, M. Hopkinson, J. P. R. David, S. K. Jones, C. C. Button, S. M. Pinches. Excess avalanche noise in In0.52Al0.48As. IEEE J. Quantum Electron., 43, 503-507(2007).

    [10] N. Li, R. Sidhu, X. Li, F. Ma, X. Zheng, S. Wang, G. Karve, S. Demiguel, A. L. Holmes, J. C. Campbell. InGaAs/InAlAs avalanche photodiode with undepleted absorber. Appl. Phys. Lett., 82, 2175-2177(2003).

    [11] F. Capasso, R. E. Nahory, M. A. Pollack, T. P. Pearsall. Observation of electronic band-structure effects on impact ionization by temperature tuning. Phys. Rev. Lett., 39, 723-726(1977).

    [12] F. Osaka, T. Mikawa. Low‐temperature characteristics of electron ionization rates in (100)‐ and (111)‐oriented InP. J. Appl. Phys., 58, 4426-4430(1985).

    [13] K. Taguchi, T. Torikai, Y. Sugimoto, K. Makita, H. Ishihara. Temperature dependence of impact ionization coefficients in InP. J. Appl. Phys., 59, 476-481(1986).

    [14] D. J. Massey, J. P. R. David, G. J. Rees. Temperature dependence of impact ionization in submicrometer silicon devices. IEEE Trans. Electron. Dev., 53, 2328-2334(2006).

    [15] S. J. Maddox, S. D. March, S. R. Bank. Broadly tunable AlInAsSb digital alloys grown on GaSb. Cryst. Growth Des., 16, 3582-3586(2016).

    [16] X. G. Zheng. Long-wavelength, high-speed avalanche photodiodes and APD arrays(2004).

    [17] Y. Tan, M. Povolotskyi, T. Kubis, T. B. Boykin, G. Klimeck. Transferable tight-binding model for strained group IV and III-V materials and heterostructures. Phys. Rev. B, 94, 045311(2016).

    [18] X. G. Zheng, P. Yuan, X. Sun, G. S. Kinsey, A. L. Holmes, B. G. Streetman, J. C. Campbell. Temperature dependence of the ionization coefficients of AlxGa1-xAs. IEEE J. Quantum Electron., 36, 1168-1173(2000).

    [19] C. N. Harrison, J. P. R. David, M. Hopkinson, G. J. Rees. Temperature dependence of avalanche multiplication in submicron Al0.6Ga0.4As diodes. J. Appl. Phys., 92, 7684-7686(2002).

    [20] F. Capasso. Physics of avalanche photodiodes. Semicond. Semimetals, 22, 1-172(1985).

    CLP Journals

    [1] Yuan Yuan, Jiyuan Zheng, Yaohua Tan, Min Ren, Yiwei Peng, Ann-Kathryn Rockwell, Seth R. Bank, Avik W. Ghosh, Joe C. Campbell. Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloy: erratum[J]. Photonics Research, 2019, 7(3): 273

    Tools

    Get Citation

    Copy Citation Text

    Yuan Yuan, Jiyuan Zheng, Yaohua Tan, Yiwei Peng, Ann-Kathryn Rockwell, Seth R. Bank, Avik Ghosh, Joe C. Campbell. Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys[J]. Photonics Research, 2018, 6(8): 794

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Set citation alerts for article
    Save article for my favorites
    Paper Information

    Category: Optical Devices

    Received: Apr. 17, 2018

    Accepted: Jun. 8, 2018

    Published Online: Aug. 1, 2018

    The Author Email: Joe C. Campbell (jccuva@virginia.edu)

    DOI:10.1364/PRJ.6.000794

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology