Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys

Yuan Yuan; Jiyuan Zheng; Yaohua Tan; Yiwei Peng; Ann-Kathryn Rockwell; Seth R. Bank; Avik Ghosh; Joe C. Campbell

doi:10.1364/PRJ.6.000794

Photonics Research, Volume. 6, Issue 8, 794(2018)

Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys

Yuan Yuan¹, Jiyuan Zheng¹, Yaohua Tan¹, Yiwei Peng¹, Ann-Kathryn Rockwell², Seth R. Bank², Avik Ghosh¹, and Joe C. Campbell^1、*

Author Affiliations

¹Electrical and Computer Engineering Department, University of Virginia, 351 McCormick Rd., Charlottesville, Virginia 22904, USA

²Electrical and Computer Engineering Department, University of Texas at Austin, 1616 Guadalupe St., Austin, Texas 78758, USA

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Yuan Yuan, Jiyuan Zheng, Yaohua Tan, Yiwei Peng, Ann-Kathryn Rockwell, Seth R. Bank, Avik Ghosh, Joe C. Campbell. Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys[J]. Photonics Research, 2018, 6(8): 794

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Paper Information

Category: Optical Devices

Received: Apr. 17, 2018

Accepted: Jun. 8, 2018

Published Online: Aug. 1, 2018

The Author Email: Joe C. Campbell (jccuva@virginia.edu)

DOI:10.1364/PRJ.6.000794

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology