The single-crystal silicon prepared by Czochralski (CZ) method is showing a development trend toward larger size, higher quality, and lower cost with the rapidly development of China’s photovoltaic industry. Nevertheless, the issue of high oxygen impurity content in single-crystal silicon is increasingly drawing attention as the size of the single-crystal silicon size increases. In this paper, based on the introduction of oxygen impurity transport mechanism during the process of preparing single-crystal silicon by CZ method, the current state of oxygen control technology in the production of single-crystal silicon was summarized. Furthermore, the influence laws of thermal field structure optimization, process optimization, doping elements, argon flow field optimization and new CZ technology on the oxygen impurity content of single-crystal silicon were analyzed, and the development direction of oxygen control technology in the future was put forward.