Researching | 2.83-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2

Journal of Semiconductors, Volume. 44, Issue 7, 072802(2023)

2.83-kV double-layered NiO/β-Ga₂O₃ vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm²

Tingting Han^1、†, Yuangang Wang^1、†, Yuanjie Lv^*, Shaobo Dun^*, Hongyu Liu^*, Aimin Bu^*, and Zhihong Feng^**

Author Affiliations

National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

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References(24)

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[13] K Yoshihiro, K Shohei, N Shinji. All-oxide p–n heterojunction diodes comprising p-type NiO and n-type β-Ga2O3. Appl Phys Express, 9, 091101(2016).

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[15] X Lu, X D Zhou, H X Jiang et al. 1-kV sputtered p-NiO/n-Ga2O3 heterojunction diodes with an ultra-low leakage current below 1 μA/cm2. IEEE Electron Device Lett, 41, 449(2020).

[16] H H Gong, F Zhou, W Z Xu et al. 1.37 kV/12 A NiO/β-Ga2O3 heterojunction diode with nanosecond reverse recovery and rugged surge-current capability. IEEE Trans Power Eletron, 36, 12213(2021).

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Tingting Han, Yuangang Wang, Yuanjie Lv, Shaobo Dun, Hongyu Liu, Aimin Bu, Zhihong Feng. 2.83-kV double-layered NiO/β-Ga₂O₃ vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm²[J]. Journal of Semiconductors, 2023, 44(7): 072802

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Paper Information

Category: Articles

Received: Dec. 8, 2022

Accepted: --

Published Online: Aug. 7, 2023

The Author Email: Lv Yuanjie (yuanjielv@163.com), Dun Shaobo (yuanjielv@163.com), Liu Hongyu (yuanjielv@163.com), Bu Aimin (yuanjielv@163.com), Feng Zhihong (ga917vv@163.com)

DOI:10.1088/1674-4926/44/7/072802

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