Researching | 2.83-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2

Journal of Semiconductors, Volume. 44, Issue 7, 072802(2023)

2.83-kV double-layered NiO/β-Ga₂O₃ vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm²

Tingting Han1,†... Yuangang Wang1,†, Yuanjie Lv*, Shaobo Dun*, Hongyu Liu*, Aimin Bu* and Zhihong Feng** |Show fewer author(s)

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National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

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References(24)

[1] H Z Zhang, L J Wang, C T Xia et al. Research progress of wide-gap semiconductor β-Ga2O3 single crystal. J Synth Cryst, 44, 2943(2015).

[2] Z Z Hu, Y J Lv, C Y Zhao et al. Beveled fluoride plasma treatment for vertica β-Ga2O3 Schottky barrier diode with high reverse blocking voltage and low turn-on voltage. IEEE Electron Device Lett, 41, 441(2020).

[3] W H Xiong, X Z Zhou, G W Xu et al. Double-barrier β-Ga2O3 Schottky barrier diode with low turn-on voltage and leakage current. IEEE Electron Device Lett, 42, 430(2021).

[4] R Saurav, B Arkka, R Praneeth et al. High-k oxide field-plated vertical (001) β-Ga2O3 Schottky barrier diode with Baliga’s figure of merit over 1 GW/cm2. IEEE Electron Device Lett, 42, 1140(2021).

[5] Q M He, W B Hao, X Z Zhou et al. Over 1 GW/cm2 vertical Ga2O3 Schottky barrier diodes without edge termination. IEEE Electron Device Lett, 43, 264(2022).

[6] W S Li, N Kazuki, Z Y Hu et al. Field-plated Ga2O3 trench Schottky barrier diodes with a BV2/Ron, sp of up to 0.95 GW/cm2. IEEE Electron Device Lett, 41, 107(2020).

[7] K Tetzner, E B Treidel, O Hilt et al. Lateral 1.8 KV β-Ga2O3 MOSFET with 155 MW/cm2 power figure of merit. IEEE Electron Device Lett, 40, 1503(2019).

[8] Y J Lv, H Y Liu, X Y Zhou et al. Lateral β-Ga2O3 MOSFETs with high power figure of merit of 277 MW/cm2. IEEE Electron Device Lett, 41, 537(2020).

[9] Z Y Hu, K Nomoto, W S Li et al. Enhancement-mode Ga2O3 vertical transistors with breakdown voltage >1 kV. IEEE Electron Device Lett, 39, 869(2018).

[10] S Sharma, K Zeng, S Saha et al. Field-plated lateral Ga2O3 MOSFETs with polymer passivation and 8.03 kV breakdown voltage. IEEE Electron Device Lett, 41, 836(2020).

[11] Z Y Zheng, B S Qiao, Z Z Zhang et al. High detectivity of metal–semiconductor–metal Ga2O3 solar-blind photodetector through thickness-regulated gain. IEEE Trans Electron Devices, 69, 4362(2022).

[12] B S Qiao, Z Z Zhang, X H Xie et al. Quenching of persistent photocurrent in an oxide UV photodetector. J Mater Chem C, 9, 4039(2021).

[13] K Yoshihiro, K Shohei, N Shinji. All-oxide p–n heterojunction diodes comprising p-type NiO and n-type β-Ga2O3. Appl Phys Express, 9, 091101(2016).

[14] H H Gong, X H Chen, Y Xu et al. A 1.86-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode. Appl Phys Lett, 117, 022104(2020).

[15] X Lu, X D Zhou, H X Jiang et al. 1-kV sputtered p-NiO/n-Ga2O3 heterojunction diodes with an ultra-low leakage current below 1 μA/cm2. IEEE Electron Device Lett, 41, 449(2020).

[16] H H Gong, F Zhou, W Z Xu et al. 1.37 kV/12 A NiO/β-Ga2O3 heterojunction diode with nanosecond reverse recovery and rugged surge-current capability. IEEE Trans Power Eletron, 36, 12213(2021).

[17] H H Gong, Z P Wang, X X Yu et al. Field-plated NiO/Ga2O3 p-n heterojunction power diodes with high-temperature thermal stability and near unity ideality factors. Electron Device Soc, 9, 1166(2021).

[18] F Zhou, H H Gong, W Z Xu et al. 1.95-kV Beveled-mesa NiO/β-Ga2O3 heterojunction diode with 98.5% conversion efficiency and over million-times overvoltage ruggedness. IEEE Trans Power Eletronics, 37, 1223(2022).

[19] Z Z Hu, J G Li, C Y Zhao et al. Design and fabrication of vertical metal/TiO2/β-Ga2O3 dielectric heterojunction diode with reverse blocking voltage of 1010 V. IEEE Trans Electron Devices, 67, 5628(2020).

[20] Y G Wang, H H Gong, Y J Lv et al. 2.41 kV vertical p-NiO/n-Ga2O3 heterojunction diodes with a record Baliga’s figure-of-merit of 5.18 GW/cm2. IEEE Trans Power Eletronics, 37, 3743(2022).

[21] J C Zhang, P F Dong, K Dang et al. Ultra-wide bandgap semiconductor Ga2O3 power diodes. Nat Commun, 13, 3900(2022).

[22] Q L Yan, H H Gong, J C Zhang et al. β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2. Appl Phys Lett, 118, 122102(2021).

[23] H H Gong, X X Yu, Y Xu et al. β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings. Appl Phys Lett, 118, 202102(2021).

[24] Y J Lv, Y G Wang, X C Fu et al. Demonstration of β-Ga2O3 junction barrier Schottky diodes with a Baliga’s figure of merit of 0.85 GW/cm2 or a 5A/700 V handling capabilities. IEEE Trans Power Eletronics, 36, 6179(2021).

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Tingting Han, Yuangang Wang, Yuanjie Lv, Shaobo Dun, Hongyu Liu, Aimin Bu, Zhihong Feng. 2.83-kV double-layered NiO/β-Ga₂O₃ vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm²[J]. Journal of Semiconductors, 2023, 44(7): 072802

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Paper Information

Category: Articles

Received: Dec. 8, 2022

Accepted: --

Published Online: Aug. 7, 2023

The Author Email: Yuanjie Lv (yuanjielv@163.com), Shaobo Dun (yuanjielv@163.com), Hongyu Liu (yuanjielv@163.com), Aimin Bu (yuanjielv@163.com), Zhihong Feng (ga917vv@163.com)

DOI:10.1088/1674-4926/44/7/072802

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