Journal of Semiconductors, Volume. 44, Issue 7, 072802(2023)
2.83-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2
Figures & Tables(6)
Fig. 1. (Color online) Cross-sectional schematic of the devices with DL-JTE/ JTE.
Fig. 2. (Color online) C–V and 1/C2–V characteristics of the Ga2O3 SBD without termination.
Fig. 3. (Color online) Forward I–V curves and Ron,sp of devices with DL-JTE/ JTE.
Fig. 4. (Color online) Breakdown characteristics of devices with DL-JTE/ JTE.
Fig. 5. (Color online) Simulated distributions of the electric field for the fabricated HJD with (a) JTE, (b) DL-JTE at bias of –2020 V, (c) DL-JTE at bias of –2830 V, and (d–f) the corresponding distribution of electric field versus position.
Fig. 6. (Color online) Vbr versus Ron,sp of β-Ga2O3-based diodes reported against our NiO/β-Ga2O3 HJD with DL-JTE.
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Tingting Han, Yuangang Wang, Yuanjie Lv, Shaobo Dun, Hongyu Liu, Aimin Bu, Zhihong Feng. 2.83-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2[J]. Journal of Semiconductors, 2023, 44(7): 072802
Paper Information
Category: Articles
Received: Dec. 8, 2022
Accepted: --
Published Online: Aug. 7, 2023
The Author Email: Lv Yuanjie (yuanjielv@163.com), Dun Shaobo (yuanjielv@163.com), Liu Hongyu (yuanjielv@163.com), Bu Aimin (yuanjielv@163.com), Feng Zhihong (ga917vv@163.com)
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