Chinese Physics B, Volume. 29, Issue 10, (2020)
Effect of source temperature on phase and metal–insulator transition temperature of vanadium oxide films grown by atomic layer deposition
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Fig. 1. (a)–(c) The AFM images of samples A–C. (d)–(f) The SEM micrographs in cross-sectional view of samples A–C.
Fig. 2. The XRD pattern of VO
Fig. 3. (a) The absorption spectra and (b) transmission spectra of samples A–C.
Fig. 4. The relation of conductivity and temperature. The insets show the
Table 1. Variation of the ratio of the strongest integrated intensity of each vanadium oxide in the film to the strongest integrated intensity of the substrate peak with the source temperature.
View tableView in ArticleTable 1. Variation of the ratio of the strongest integrated intensity of each vanadium oxide in the film to the strongest integrated intensity of the substrate peak with the source temperature.
Source temperature/°C IV2O5 / IAl2O3 IV4O9 / IAl2O3 IV6O13 / IAl2O3 IVO2 / IAl2O3 IV6O11 / IAl2O3 90 3.09 2.24 1.91 0 0 100 3.51 0 1.08 1.37 3.57 110 7.27 0 2.31 3.86 10.12
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Bingheng Meng, Dengkui Wang, Deshuang Guo, Juncheng Liu, Xuan Fang, Jilong Tang, Fengyuan Lin, Xinwei Wang, Dan Fang, Zhipeng Wei. Effect of source temperature on phase and metal–insulator transition temperature of vanadium oxide films grown by atomic layer deposition[J]. Chinese Physics B, 2020, 29(10):
Paper Information
Received: Jan. 16, 2020
Accepted: --
Published Online: Apr. 21, 2021
The Author Email: Wang Dengkui (zpweicust@126.com)
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