High Power Laser and Particle Beams, Volume. 32, Issue 7, 071002(2020)

Impact of annealing on laser resistance of HfO2 films fabricated byALD, IBS and EBE techniques

Hao Liu1... Ping Ma2, Yunti Pu2 and Zuzhen Zhao1 |Show fewer author(s)
Author Affiliations
  • 1Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057, China
  • 2Research Center of Laser Fusion, CAEP, P. O. Box 919-988, Mianyang 621900, China
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    Figures & Tables(9)
    Schematic of the IBS and ALD equipments
    Test benches for LIDT
    Dispersion of HfO2 films deposited by different techniques
    0% LIDT of different HfO2 films
    Laser damage probabilities of different HfO2 films
    The laser damage probability of 500 ℃ annealed ALD HfO2 film irradiated by 10 pulses and 10 000 pulses
    Laser damage morphologies
    Impact of defect on the local temperature in the defect-induced laser damage model
    • Table 1. The weak absorption of ALD HfO2 film annealed at different temperature

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      Table 1. The weak absorption of ALD HfO2 film annealed at different temperature

      sampleas-deposited/10−6300 ℃ annealed/10−6500 ℃ annealed/10−6
      ALD HfO2 film 13.219.11 800
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    Hao Liu, Ping Ma, Yunti Pu, Zuzhen Zhao. Impact of annealing on laser resistance of HfO2 films fabricated byALD, IBS and EBE techniques[J]. High Power Laser and Particle Beams, 2020, 32(7): 071002

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    Paper Information

    Category: High Power Laser Physics and Technology

    Received: Jan. 8, 2020

    Accepted: --

    Published Online: Jul. 10, 2020

    The Author Email:

    DOI:10.11884/HPLPB202032.200006

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