Infrared and Laser Engineering, Volume. 45, Issue 12, 1204001(2016)
Study of the sub-surface damage of HgCdTe induced by chemical-mechanical polishing method
[1] [1] Michael Quirk, Julian Serda. Semiconductor Manufacturing Teohnology[M]. Beijing: Publishing House of Electronics Industry, 2004: 477.
[2] [2] Luo Jianfeng, Dornfeld David A. Material removal mechanism in chemical mechanical polishing: theory and modeling[J]. IEEE Transactions on Semiconductor Manufacturing, 2001, 14(2): 112-133.
[6] [6] Zhou Fang, Tian Ying, Yao Ying. The method study on electrochemical etch of HgCdTe surface[J]. Infrared Technology, 2001, 23(4): 18-21. (in Chinese)
[7] [7] Yan Li, Jie Wanqi, Hang Gao, et al. A new high-efficiency and low-damage polishing process of HgCdTe wafer[J]. Materials and Manufacturing Processes, 2012, 27: 229-232.
[8] [8] Salvador Bosch, Josep Ferre-Borrull, Norbert Leinfellner, et al. Effective dielectric function of mixtures of three or morematerials: a numerical procedure for computations[J]. Surface Science, 2000, 453: 9-17.
[9] [9] Lopes V C, Syllaios A J, Chen M C. Minority carrier lifetime in mercurycadmium telluride[J]. Semicond Sci Technol, 1993, 8: 824-841
Get Citation
Copy Citation Text
Qiao Hui, Chen Xintian, Zhao Shuiping, Lan Tianyi, Wang Nili, Zhu Longyuan, Li Xiangyang. Study of the sub-surface damage of HgCdTe induced by chemical-mechanical polishing method[J]. Infrared and Laser Engineering, 2016, 45(12): 1204001
Category: 红外技术及应用
Received: Apr. 17, 2016
Accepted: May. 20, 2016
Published Online: Jan. 12, 2017
The Author Email: Hui Qiao (qiaohui@mail.sitp.ac.cn)