Infrared and Laser Engineering, Volume. 45, Issue 12, 1204001(2016)

Study of the sub-surface damage of HgCdTe induced by chemical-mechanical polishing method

Qiao Hui1...2,*, Chen Xintian1,3, Zhao Shuiping1, Lan Tianyi1, Wang Nili1, Zhu Longyuan1 and Li Xiangyang1 |Show fewer author(s)
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    References(9)

    [1] [1] Michael Quirk, Julian Serda. Semiconductor Manufacturing Teohnology[M]. Beijing: Publishing House of Electronics Industry, 2004: 477.

    [2] [2] Luo Jianfeng, Dornfeld David A. Material removal mechanism in chemical mechanical polishing: theory and modeling[J]. IEEE Transactions on Semiconductor Manufacturing, 2001, 14(2): 112-133.

    [6] [6] Zhou Fang, Tian Ying, Yao Ying. The method study on electrochemical etch of HgCdTe surface[J]. Infrared Technology, 2001, 23(4): 18-21. (in Chinese)

    [7] [7] Yan Li, Jie Wanqi, Hang Gao, et al. A new high-efficiency and low-damage polishing process of HgCdTe wafer[J]. Materials and Manufacturing Processes, 2012, 27: 229-232.

    [8] [8] Salvador Bosch, Josep Ferre-Borrull, Norbert Leinfellner, et al. Effective dielectric function of mixtures of three or morematerials: a numerical procedure for computations[J]. Surface Science, 2000, 453: 9-17.

    [9] [9] Lopes V C, Syllaios A J, Chen M C. Minority carrier lifetime in mercurycadmium telluride[J]. Semicond Sci Technol, 1993, 8: 824-841

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    Qiao Hui, Chen Xintian, Zhao Shuiping, Lan Tianyi, Wang Nili, Zhu Longyuan, Li Xiangyang. Study of the sub-surface damage of HgCdTe induced by chemical-mechanical polishing method[J]. Infrared and Laser Engineering, 2016, 45(12): 1204001

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    Paper Information

    Category: 红外技术及应用

    Received: Apr. 17, 2016

    Accepted: May. 20, 2016

    Published Online: Jan. 12, 2017

    The Author Email: Hui Qiao (qiaohui@mail.sitp.ac.cn)

    DOI:10.3788/irla201645.1204001

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