Journal of Synthetic Crystals, Volume. 53, Issue 10, 1712(2024)

Preparation and Epitaxy Application of 8 Inch SiC Wafers

HAN Jingrui1... LI Xiguang1, LI Yongmei1, WANG Yaohao2, ZHANG Qingchun3, LI Da4, SHI Jianxin4, YAN Honglei4, HAN Yuebin4 and TING Hungkit1,* |Show fewer author(s)
Author Affiliations
  • 1Guangdong TYSiC Semiconductor Co. Ltd., Dongguan 523808, China
  • 2Guangzhou Summit Crystal Semiconductor Co., Ltd., Guangzhou 511458, China
  • 3SICHAIN Semiconductor Co., Ltd., Ningbo 315336, China
  • 4SiCentury Semiconductor Technology (Suzhou) Co., Ltd., Suzhou 215021, China
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    References(16)

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    [8] [8] Semiconductor engineering. SiC demand growing faster than supply[EB/OL].(2019-05-23)[2024-06-01]. https://semiengineering.com/sic-demand-growing-faster-than-supply/.

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    [12] [12] Wolfspeed, Inc. Wolfspeed opens the world’s largest 200 mm silicon carbide fab enabling highly anticipated device production [EB/OL].(2022-04-22)[2024-06-01]. https://www.wolfspeed.com/company/news-events/news/wolfspeed-opens-the-worlds-largest-200 mm-silicon-carbide-fab-enabling-highly-anticipated-device-production/.

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    [19] [19] ZHANG S T, FU G Q, CAI H D, et al. Design and optimization of thermal field for PVT method 8-inch SiC crystal growth[J]. Materials, 2023, 16(2): 767.

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    HAN Jingrui, LI Xiguang, LI Yongmei, WANG Yaohao, ZHANG Qingchun, LI Da, SHI Jianxin, YAN Honglei, HAN Yuebin, TING Hungkit. Preparation and Epitaxy Application of 8 Inch SiC Wafers[J]. Journal of Synthetic Crystals, 2024, 53(10): 1712

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    Paper Information

    Category:

    Received: Jun. 18, 2024

    Accepted: Jan. 17, 2025

    Published Online: Jan. 17, 2025

    The Author Email: Hungkit TING (ding.xiongjie@sicty.com)

    DOI:

    CSTR:32186.14.

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