Journal of Synthetic Crystals, Volume. 53, Issue 10, 1712(2024)

Preparation and Epitaxy Application of 8 Inch SiC Wafers

HAN Jingrui1... LI Xiguang1, LI Yongmei1, WANG Yaohao2, ZHANG Qingchun3, LI Da4, SHI Jianxin4, YAN Honglei4, HAN Yuebin4 and TING Hungkit1,* |Show fewer author(s)
Author Affiliations
  • 1Guangdong TYSiC Semiconductor Co. Ltd., Dongguan 523808, China
  • 2Guangzhou Summit Crystal Semiconductor Co., Ltd., Guangzhou 511458, China
  • 3SICHAIN Semiconductor Co., Ltd., Ningbo 315336, China
  • 4SiCentury Semiconductor Technology (Suzhou) Co., Ltd., Suzhou 215021, China
  • show less
    Figures & Tables(0)
    Tools

    Get Citation

    Copy Citation Text

    HAN Jingrui, LI Xiguang, LI Yongmei, WANG Yaohao, ZHANG Qingchun, LI Da, SHI Jianxin, YAN Honglei, HAN Yuebin, TING Hungkit. Preparation and Epitaxy Application of 8 Inch SiC Wafers[J]. Journal of Synthetic Crystals, 2024, 53(10): 1712

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Jun. 18, 2024

    Accepted: Jan. 17, 2025

    Published Online: Jan. 17, 2025

    The Author Email: Hungkit TING (ding.xiongjie@sicty.com)

    DOI:

    CSTR:32186.14.

    Topics