Researching | A novel one-time-programmable memory unit based on Schottky-type p-GaN diode

Journal of Semiconductors, Volume. 45, Issue 3, 032502(2024)

A novel one-time-programmable memory unit based on Schottky-type p-GaN diode

Chao Feng^1,2, Xinyue Dai^1,2, Qimeng Jiang^1,2、*, Sen Huang^1,2、**, Jie Fan¹, Xinhua Wang^1,2, and Xinyu Liu^1,2

Author Affiliations

¹Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

²University of Chinese Academy of Sciences, Beijing 100049, China

show less

Full Text Get PDF

Figures&Tables (7)

References (20)

Paper Information

References(20)

[1] K J Chen, O Häberlen, A Lidow et al. GaN-on-Si power technology: Devices and applications. IEEE Trans Electron Devices, 64, 779(2017).

[2] H Amano, Y Baines, M Borga et al. The 2018 GaN power electronics roadmap. J Phys D: Appl Phys, 51, 163001.

[3] Z Y Zheng, L Zhang, W J Song et al. Gallium nitride-based complementary logic integrated circuits. Nat Electron, 4, 595(2021).

[4] Z Zheng, H Xu, L Zhang et al. On the operating speed and energy efficiency of GaN-based monolithic complementary logic circuits for integrated power conversion systems. Fundamental Research, 661.

[5] Y R Chen, H Song, H Jiang et al. Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism. Appl Phys Lett, 105, 193502(2014).

[6] T Chen, Z Y Zheng, S R Feng et al. Endurance improvement of GaN bipolar charge trapping memory with back gate injection. IEEE Electron Device Lett, 44, 1408(2023).

[7] K Fu, H Q Fu, X Q Huang et al. Threshold switching and memory behaviors of epitaxially regrown GaN-on-GaN vertical p-n diodes with high temperature stability. IEEE Electron Device Lett, 40, 375(2019).

[8] M Y Yuan, Q Y Xie, J Niroula et al. GaN memory operational at 300 °C. IEEE Electron Device Lett, 43, 2053(2022).

[9] L Sayadi, G Iannaccone, S Sicre et al. Threshold voltage instability in p-GaN gate AlGaN/GaN HFETs. IEEE Trans Electron Devices, 65, 2454(2018).

[10] J He, W T Chan, C Wang et al. A compact CMOS compatible oxide antifuse with polysilicon diode driver. IEEE Trans Electron Devices, 59, 2539(2012).

[11] R J Kuo, F C Chang, Y C King et al. Antifuse OTP cell in a cross-point array by advanced CMOS FinFET process. IEEE Trans Electron Devices, 66, 1729(2019).

[12] K P Ng, M C Lee, K C Kwong et al. Diode based gate oxide anti-fuse one time programmable memory array in standard CMOS process, 457(2010).

[13] B N Pushpakaran, A S Subburaj, S B Bayne. Commercial GaN-based power electronic systems: A review. J Electron Mater, 49, 6247(2020).

[14] X Y Dai, Z C Ji, Q M Jiang et al. Suppression of reverse leakage in enhancement-mode GaN high-electron-mobility transistor by extended PGaN technology. Phys Status Solidi A, 220, 2200692(2023).

[15] A N Tallarico, S Stoffels, P Magnone et al. Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs. IEEE Electron Device Lett, 38, 99(2017).

[16] C Feng, Q M Jiang, S Huang et al. Gate-bias-accelerated VTH recovery on schottky-type p-GaN gate AlGaN/GaN HEMTs. IEEE Trans Electron Devices, 70, 4591(2023).

[17] F Lee, L Y Su, C H Wang et al. Impact of gate metal on the performance of p-GaN/AlGaN/GaN high electron mobility transistors. IEEE Electron Device Lett, 36, 232(2015).

[18] T L Wu, D Marcon, S Z You et al. Forward bias gate breakdown mechanism in enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors. IEEE Electron Device Lett, 36, 1001(2015).

[19] S Stoffels, B Bakeroot, T L Wu et al. Failure mode for p-GaN gates under forward gate stress with varying Mg concentration, 4B(2017).

[20] F Masin, M Meneghini, E Canato et al. Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress. Appl Phys Lett, 115, 052103(2019).

Tools

Get Citation

Copy Citation Text

Chao Feng, Xinyue Dai, Qimeng Jiang, Sen Huang, Jie Fan, Xinhua Wang, Xinyu Liu. A novel one-time-programmable memory unit based on Schottky-type p-GaN diode[J]. Journal of Semiconductors, 2024, 45(3): 032502

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Articles

Received: Oct. 21, 2023

Accepted: --

Published Online: Apr. 24, 2024

The Author Email: Jiang Qimeng (QMJiang), Huang Sen (SHuang)

DOI:10.1088/1674-4926/45/3/032502

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology