Fig. 1. (Color online) Schematic diagram of the process flow of the Schottky-type p-GaN HEMT.

Fig. 2. (Color online) (a) Schematic structure of the Schottky-type p-GaN gate AlGaN/GaN HEMTs. (b) Physical image of the devices under the optical microscope. (c) Double-sweep I_D−V_G characteristic (black) and the I_G−V_G curve (blue) of the HEMT measured at a V_DS of 1 V.

Fig. 3. (Color online) (a) Programming process of the Schottky-type p-GaN diode-based OTP device. (b) The schematic of a 2 × 2 OTP array.

Fig. 4. (Color online) (a) Comparison of the anode current before and after programming (inset shows the read voltage margin). (b) Statistics of programming voltage for 60 devices.

Fig. 5. (Color online) (a) Program time under different program voltages (three devices each) . (b) Breakdown characteristics of the PIN junction of the p-GaN diode.

Fig. 6. (Color online) Current ratio after different read cycles at a read voltage of 3 V (a) and 6 V (b). Pulse frequency: 1 Hz to 1 MHz, pulse duty cycle: 50%.

Fig. 7. (Color online) (a) Weibull distribution of the breakdown time of the Schottky junction in the p-GaN diode. (b)Reverse bias voltages for a 10-year lifetime extracted from exponential and power laws at a 63.2% failure rate.