[1] J ZHANG, B LI, C XIA et al. Growth and spectral characterization of β-Ga₂O₃ single crystals. Journal of Physics and Chemistry of Solids, 67, 2448(2006).

[2] H H TIPPINS. Optical absorption and photoconductivity in the band edge of β-Ga₂O₃. Physical Review, 140, A316(1965).

[3] T MATSUMOTO, M AOKI, A KINOSHITA et al. Absorption and reflection of vapor grown single crystal platelets of β-Ga₂O₃. Japanese Journal of Applied Physics, 13, 1578(1974).

[4] F RICCI, F BOSCHI, A BARALDI et al. Theoretical and experimental investigation of optical absorption anisotropy in β-Ga₂O₃. Journal of Physics: Condensed Matter, 28, 224005(2016).

[5] T ONUMA, S SAITO, K SASAKI et al. Valence band ordering in β-Ga₂O₃ studied by polarized transmittance and reflectance spectroscopy. Japanese Journal of Applied Physics, 54, 112601(2015).

[6] N HE, H TANG, B LIU et al. Ultra-fast scintillation properties of β-Ga₂O₃ single crystals grown by floating zone method. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 888, 9(2018).

[7] Z GALAZKA, S GANSCHOW, P SEYIDOV et al. Two inch diameter, highly conducting bulk β-Ga₂O₃ single crystals grown by the Czochralski method. Applied Physics Letters, 120, 152101(2022).

[8] Y UEDA, T IGARASHI, K KOSHI et al. Two-inch Fe-doped β-Ga₂O₃ (010) substrates prepared using vertical bridgman method. Japanese Journal of Applied Physics, 62, SF1006(2023).

[9] H TANG, N HE, H ZHANG et al. Inhibition of volatilization and polycrystalline cracking, and the optical properties of β-Ga₂O₃ grown by the EFG method. CrystEngComm, 22, 924(2020).

[10] Z LI, J CHEN, H TANG et al. Band gap engineering in β-Ga₂O₃ for a high-performance X-ray detector. ACS Applied Electronic Materials, 3, 4630(2021).

[11] C ZHANG, H TANG, J LI et al. Boltzmann thermometer with broadband emission in Mn⁴⁺-doped β-Ga₂O₃ crystals. Journal of Luminescence, 267, 120334(2024).

[12] H XIAO, G SHAO, Q SAI et al. Wide Bandgap engineering of β-(Al, Ga)₂O₃ mixed crystals. Journal of Inorganic Materials, 31, 1258(2016).

[13] Y KPKUBUN, T ABE, S NAKAGOMI, prepared Sol-Gel. Ga_1-xIn_x)₂O₃ thin films for solar-blind ultraviolet photodetectors. Physica Status Solidi (a), 207, 1741(2010).

[14] S SEACAT, J L LYONS, H PEELAERS. Properties of orthorhombic Ga₂O₃ alloyed with In₂O₃ and Al₂O₃. Applied Physics Letters, 119, 042104(2021).

[15] E B SHAIK, C S KAMAL, K SRINIVASU et al. Optical insights of indium-doped β-Ga₂O₃ nanoparticles and its luminescence mechanism. Journal of Materials Science: Materials in Electronics, 31, 6185(2020).

[16] T LIN, C XIE, S YANG et al. Investigation on the bandgap- adjustable (Ga_1-xIn_x)₂O₃ film prepared by magnetron sputtering. ACS Applied Electronic Materials, 6, 1858(2024).

[17] S M SUN, W J LIU, Y P WANG et al. Band alignment of In₂O₃/ β-Ga₂O₃ interface determined by X-ray photoelectron spectroscopy. Applied Physics Letters, 113, 031603(2018).

[18] H TANG, Q WU, P LUO et al. Growth and property of In:Ga₂O₃ oxide semiconductor single crystal. Journal of Inorganic Materials, 32, 621(2017).

[19] Z GALAZKA, R UECKER, K IRMSCHER et al. Melt growth, characterization and properties of bulk In₂O₃ single crystals. Journal of Crystal Growth, 362, 349(2013).

[20] T OSHIMA, S FUJITA. Properties of Ga₂O₃-based (In_xGa_1-x)₂O₃ alloy thin films grown by molecular beam epitaxy. Physica Status Solidi (c), 5, 3113(2008).

[21] F ZHANG, K SAITO, T TANAKA et al. Wide bandgap engineering of (GaIn)₂O₃ films. Solid State Communications, 186, 28(2014).

[22] F ZHANG, J SUN, H LI et al. Band-gap tunable (Ga_xIn_1-x)₂O₃ layer grown by magnetron sputtering. Frontiers of Information Technology & Electronic Engineering, 22, 1370(2021).

[23] V I VASYLTSIV, Y I RYM, Y M ZAKHARKO. Optical absorption and photoconductivity at the band edge of β-Ga_2-xIn_xO₃. Physica Status Solidi (b), 195, 653(1996).

[24] Q WU, H TANG, L SU et al. Growth and properties of β-Ga₂O₃:In single crystal by optical floating zone method. Journal of the Chinese Ceramic Society, 45, 548(2017).

[25] Z LI, H TANG, Y LI et al. Enhanced scintillation performance of β-Ga₂O₃ single crystals by Al³⁺ doping and its physical mechanism. Applied Physics Letters, 121, 102102(2022).

[26] H TANG, N HE, Z ZHU et al. Temperature-dependence of X-ray excited luminescence of β-Ga₂O₃ single crystals. Applied Physics Letters, 115, 071904(2019).

[27] J B VARLEY, J R WEBER, A JANOTTI et al. Oxygen vacancies and donor impurities in β-Ga₂O₃. Applied Physics Letters, 97, 142106(2010).

[28] V WANG, W XIAO, L J KANG et al. Sources of n-type conductivity in GaInO₃. Journal of Physics D: Applied Physics, 48, 015101(2015).

[29] E G VÍLLORA, M YAMAGA, T INOUE et al. Optical spectroscopy study on β-Ga₂O₃. Japanese Journal of Applied Physics, 41, L622(2002).

[30] M M ISLAM, D RANA, A HERNANDEZ et al. Study of trap levels in β-Ga₂O₃ by thermoluminescence spectroscopy. Journal of Applied Physics, 125, 055701(2019).