Journal of Inorganic Materials, Volume. 39, Issue 12, 1384(2024)

High-quality Indium-doped Gallium Oxide Single Crystal Growth by Floating Zone Method

Xianke LI, Chaoyi ZHANG, Lin HUANG, Peng SUN, Bo LIU, Jun XU, and Huili TANG*
Author Affiliations
  • MOE Key Laboratory of Advanced Micro-Structured Materials, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
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    Figures & Tables(9)
    Images of as-grown β-Ga2O3:In crystals
    XRD patterns of β-Ga2O3:In crystal powders
    Optical microscope morphologies of bubble defects in opaque β-Ga2O3:9%In
    SEM image, EDS pattern and corresponding elemental mappings of the opaque β-Ga2O3:9%In crystal
    Transparent β-Ga2O3:9%In crystal morphology under optical microscope
    SEM image, EDS pattern and corresponding elemental mappings of transparent β-Ga2O3:9%In crystal
    Absorption spectra and optical bandgaps of UID β-Ga2O3 and β-Ga2O3:In crystals
    Rocking curves of (a) opaque β-Ga2O3:9%In and (b) transparent β-Ga2O3:9%In crystals
    • Table 1. ICP-AES testing of transparent β-Ga2O3:9%In and β-Ga2O3:15%In crystals (%, in mass)

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      Table 1. ICP-AES testing of transparent β-Ga2O3:9%In and β-Ga2O3:15%In crystals (%, in mass)

      Elementβ-Ga2O3:9%In β-Ga2O3:15%In
      In1.761.87
      Si0.010.03
      Al0.010.01
      Fe0.010
      Mg0.020.02
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    Xianke LI, Chaoyi ZHANG, Lin HUANG, Peng SUN, Bo LIU, Jun XU, Huili TANG. High-quality Indium-doped Gallium Oxide Single Crystal Growth by Floating Zone Method[J]. Journal of Inorganic Materials, 2024, 39(12): 1384

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    Paper Information

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    Received: May. 13, 2024

    Accepted: --

    Published Online: Jan. 21, 2025

    The Author Email: TANG Huili (tanghl@tongji.edu.cn)

    DOI:10.15541/jim20240241

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