Journal of Inorganic Materials, Volume. 38, Issue 10, 1149(2023)

Oxide Memristors for Brain-inspired Computing

Xia ZHUGE1... Renxiang ZHU1, Jianmin WANG1, Jingrui WANG1, and Fei ZHUGE2,3,45,* |Show fewer author(s)
Author Affiliations
  • 11. School of Electronic and Information Engineering, Ningbo University of Technology, Ningbo 315211, China
  • 22. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
  • 33. Center for Excellence in Brain Science and Intelligence Technology, Chinese Academy of Sciences, Shanghai 200031, China
  • 44. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100029, China
  • 55. Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
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    Figures & Tables(5)
    Pattern classification using a single-layer perceptron based on TiO2-x memristor[74]
    Pt/TaOx/TiO2-x/Pt memristor[75]
    Cu/Ta2O5/Pt memristor[108]
    All-optically controlled memristor based on OD-IGZO/OR-IGZO[34]
    ZnO-based all-optically controlled memristor[35]
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    Xia ZHUGE, Renxiang ZHU, Jianmin WANG, Jingrui WANG, Fei ZHUGE. Oxide Memristors for Brain-inspired Computing[J]. Journal of Inorganic Materials, 2023, 38(10): 1149

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    Paper Information

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    Received: Feb. 9, 2023

    Accepted: --

    Published Online: Mar. 6, 2024

    The Author Email: ZHUGE Fei (zhugefei@nimte.ac.cn)

    DOI:10.15541/jim20230066

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