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Journal of Infrared and Millimeter Waves, Volume. 42, Issue 3, 306(2023)

Liquid Phase Epitaxy (LPE) growth of the room-temperature InAs-based mid-infrared photodetector

Ze-Zhong CHEN1, Yong-Fei DUAN1, Hong-Yu LIN3, Zhen-Yu ZHANG1, Hao XIE2, Yan SUN2, Shu-Hong HU2、*, and Ning DAI2,4、**
Author Affiliations
  • 1School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai 200093, China
  • 2Shanghai Institute of Technical Physics of the Chinese Academy of Sciences, Shanghai 200083, China
  • 3Zhejiang Lab, Hangzhou311100, China
  • 4Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
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    [8] X Du, B T Marozas, G R Savich et al. Defect-related surface currents in InAs-based nBn infrared detectors. Journal of Applied Physics, 123, 214504-1-214504-5(2018).

    [9] G R Deng, W Y Yang, P Zhao et al. High operating temperature InAsSb-based mid-infrared focal plane array with a band-aligned compound barrier. Applied Physics Letters, 116, 031104(2020).

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    [11] J C Tong, L Tobing, S P Qiu et al. Room temperature plasmon-enhanced InAs0.91Sb0.09-based heterojunction n-i-p mid-wave infrared photodetector. Applied Physics Letters, 113, 011110.1-011110.5(2018).

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    [13] F Suo, J C Tong, L Qian et al. Study of dark current in mid-infrared InAsSb-based hetero n-i-p photodiode. Journal of Physics D-Applied Physics, 51, 275102(2018).

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    [16] H Y Lin, Z J Zhou, H Xie et al. High-performance room-temperature extended-wavelength InAs-based middle-wavelength infrared photodetector. Physica Status Solidi (A)- Applications and Materials Science, 218, 2100281(2021).

    [17] A Krier, W Suleiman et al. Uncooled photodetectors for the 3–5 μm spectral range based on III–V heterojunctions. Applied Physics Letters, 89, 083512(2006).

    [18] X Marcadet, A Rakovska, I Prevot et al. MBE growth of room-temperature InAsSb mid-infrared detectors. Journal of Crystal Growth, 227, 609-613(2001).

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    [20] Teledyne Judson. J12 series InAs detector. http://www.teledynejudson.com/products/indium-arsenide-detectors)

    [21] P Hamamatsu. 10090-01, InAs Detector. https://www.hamamatsu.com/eu/en/product/type/P10090-01/index.html)

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    Ze-Zhong CHEN, Yong-Fei DUAN, Hong-Yu LIN, Zhen-Yu ZHANG, Hao XIE, Yan SUN, Shu-Hong HU, Ning DAI. Liquid Phase Epitaxy (LPE) growth of the room-temperature InAs-based mid-infrared photodetector[J]. Journal of Infrared and Millimeter Waves, 2023, 42(3): 306

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    Paper Information

    Category: Research Articles

    Received: Oct. 13, 2022

    Accepted: --

    Published Online: Jul. 5, 2023

    The Author Email: HU Shu-Hong (hush@mail.sitp.ac.cn), DAI Ning (ndai@mail.sitp.ac.cn)

    DOI:10.11972/j.issn.1001-9014.2023.03.004

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology