Liquid Phase Epitaxy (LPE) growth of the room-temperature InAs-based mid-infrared photodetector

Ze-Zhong CHEN; Yong-Fei DUAN; Hong-Yu LIN; Zhen-Yu ZHANG; Hao XIE; Yan SUN; Shu-Hong HU; Ning DAI

doi:10.11972/j.issn.1001-9014.2023.03.004

Journal of Infrared and Millimeter Waves, Volume. 42, Issue 3, 306(2023)

Liquid Phase Epitaxy (LPE) growth of the room-temperature InAs-based mid-infrared photodetector

Ze-Zhong CHEN¹, Yong-Fei DUAN¹, Hong-Yu LIN³, Zhen-Yu ZHANG¹, Hao XIE², Yan SUN², Shu-Hong HU^2、*, and Ning DAI^2,4、**

Author Affiliations

¹School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai 200093, China

²Shanghai Institute of Technical Physics of the Chinese Academy of Sciences, Shanghai 200083, China

³Zhejiang Lab, Hangzhou311100, China

⁴Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China

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Figures & Tables(7)

Fig. 1. （a）HRXRD patterns of samples S1-S6 and （b）rocking curves of （400）peaks of InAsSbP epilayer of samples S1-S6

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Fig. 2. Optical surface morphology of samples S1-S6

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Fig. 3. The structure schematic of the device samples D1-D3

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Fig. 4. The HRXRD patterns of the device samples D1-D3

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Fig. 5. I-V curves of device samples D1-D3

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Fig. 6. The responsivity and detectivity of device sample D2 measured at room temperature

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Table 1. Growth temperature T_g, liquid and solid composition of device samples with different lattice mismatches

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Table 1. Growth temperature T_g, liquid and solid composition of device samples with different lattice mismatches

Sample	Lattice mismatch of InAsSbP/InAs	T_g/℃	Layer	Liquid composition （Mole fraction）				Solid composition （InAs_1-x-ySb_xP_y）
Sample	Lattice mismatch of InAsSbP/InAs	T_g/℃	Layer	$X_{L}^{I n}$	$X_{L}^{A s}$	$X_{L}^{S b}$	$X_{L}^{P}$	x	y
D1	0.09	553	InAsSbP barrier	0.652 3	0.010 5	0.336 1	0.001 1	0.10	0.37
			InAs absorber	0.910 4	0.089 6	-	-	-	-
			InAsSbP window	0.652 3	0.010 5	0.336 1	0.001 1	0.10	0.37
D2	0.21	553	InAsSbP barrier	0.633 6	0.010 5	0.354 8	0.001 1	0.12	0.30
			InAs absorber	0.910 4	0.089 6	-	-	-	-
			InAsSbP window	0.633 6	0.010 5	0.354 8	0.001 1	0.12	0.30
D3	0.40	551	InAsSbP barrier	0.633 7	0.010 5	0.354 8	0.001 0	0.14	0.26
			InAs absorber	0.910 4	0.089 6	-	-	-	-
			InAsSbP window	0.633 7	0.010 5	0.354 8	0.001 0	0.14	0.26

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Ze-Zhong CHEN, Yong-Fei DUAN, Hong-Yu LIN, Zhen-Yu ZHANG, Hao XIE, Yan SUN, Shu-Hong HU, Ning DAI. Liquid Phase Epitaxy (LPE) growth of the room-temperature InAs-based mid-infrared photodetector[J]. Journal of Infrared and Millimeter Waves, 2023, 42(3): 306

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Paper Information

Category: Research Articles

Received: Oct. 13, 2022

Accepted: --

Published Online: Jul. 5, 2023

The Author Email: HU Shu-Hong (hush@mail.sitp.ac.cn), DAI Ning (ndai@mail.sitp.ac.cn)

DOI:10.11972/j.issn.1001-9014.2023.03.004

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Growth temperature Tg, liquid and solid composition of device samples with different lattice mismatches

Table 1. Growth temperature Tg, liquid and solid composition of device samples with different lattice mismatches

Table 1. Growth temperature T_g, liquid and solid composition of device samples with different lattice mismatches

Table 1. Growth temperature T_g, liquid and solid composition of device samples with different lattice mismatches