[1] W H Hirschwald. Zinc oxide: an outstanding example of a binary compound semiconductor. Acc Chem Res, 18, 228-234(1985).

[2] [2] JagadishCPeartonS JZinc Oxide Bulk, Thin Films and Nanostructures: Processing, Properties, and Applications (Elsevier, Amsterdam, 2006)Jagadish C, Pearton S J. Zinc Oxide Bulk, Thin Films and Nanostructures: Processing, Properties, and Applications (Elsevier, Amsterdam, 2006).

[3] [3] KlingshirnC FWaagAHoffmannAGeurtsJZinc Oxide: From Fundamental Properties Towards Novel Applications (Springer, Berlin Heidelberg, 2010)Klingshirn C F, Waag A, Hoffmann A, Geurts J. Zinc Oxide: From Fundamental Properties Towards Novel Applications (Springer, Berlin Heidelberg, 2010).

[4] [4] SunX WYiYZnO Nanostructures and Their Applications (CRC Press, New York, 2016)Sun X W, Yi Y. ZnO Nanostructures and Their Applications (CRC Press, New York, 2016).

[5] Ü Özgür, Y I Alivov, C Liu, A Teke, M A Reshchikov et al. A comprehensive review of ZnO materials and devices. J Appl Phys, 98, 041301(2005).

[6] V Srikant, D R Clarke. On the optical band gap of zinc oxide. J Appl Phys, 83, 5447-5451(1998).

[7] A F Kohan, G Ceder, D Morgan, C G Van de Walle. First-principles study of native point defects in ZnO. Phys Rev B, 61, 15019-15027(2000).

[8] S B Zhang, S H Wei, A Zunger. Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO. Phys Rev B, 63, 075205(2001).

[9] S L Shi, G Q Li, S J Xu, Y Zhao, G H Chen. Green luminescence band in ZnO: fine structures, electron-phonon coupling, and temperature effect. J Phys Chem B, 110, 10475-10478(2006).

[10] A A Sokol, S A French, S T Bromley, R A Catlow, H J Van Dam et al. Point defects in ZnO. Faraday Discuss, 134, 267-282(2007).

[11] A Janotti, C G Van de Walle. Native point defects in ZnO. Phys Rev B, 76, 165202(2007).

[12] M D McCluskey, S J Jokela. Defects in ZnO. J Appl Phys, 106, 071101(2009).

[13] X M Dai, S J Xu, C C Ling, G Brauer, W Anwand et al. Emission bands of nitrogen-implantation induced luminescent centers in ZnO crystals: experiment and theory. J Appl Phys, 112, 046102(2012).

[14] J C Fan, K M Sreekanth, Z Xie, S L Chang, K V Rao. P-type ZnO materials: theory, growth, properties and devices. Prog Mater Sci, 58, 874-985(2013).

[15] J Bollmann, D K Simon. Deep level defects in ZnO. Physica B Condens Matter, 439, 14-19(2014).

[16] Y N Chen, S J Xu, C C Zheng, J Q Ning, F C C Ling et al. Nature of red luminescence band in research-grade ZnO single crystals: a "self-activated" configurational transition. Appl Phys Lett, 105, 041912(2014).

[17] L Ding, B K Li, H T He, W K Ge, J N Wang et al. Classification of bound exciton complexes in bulk ZnO by magnetophotoluminescence spectroscopy. J Appl Phys, 105, 053511(2009).

[18] Y N Chen, C C Zheng, J Q Ning, R X Wang, C C Ling et al. Who make transparent ZnO colorful?-Ion implantation and thermal annealing effects. Superlattices Microstruct, 99, 208-213(2016).

[19] H G Ye, Z C Su, F Tang, M Z Wang, G D Chen et al. Excitation dependent phosphorous property and new model of the structured green luminescence in ZnO. Sci Rep, 7, 41460(2017).

[20] A Alkauskas, A Pasquarello. Band-edge problem in the theoretical determination of defect energy levels: the O vacancy in ZnO as a benchmark case. Phys Rev B, 84, 125206(2011).

[21] J Koßmann, C Hättig. Investigation of interstitial hydrogen and related defects in ZnO. Phys Chem Chem Phys, 14, 16392-16399(2012).

[22] J L Lyons, A Alkauskas, A Janotti, C G Van de Walle. Deep donor state of the copper acceptor as a source of green luminescence in ZnO. Appl Phys Lett, 111, 042101(2017).

[23] H G Ye, Z C Su, F Tang, G D Chen, J Wang et al. Role of free electrons in phosphorescence in n-type wide bandgap semiconductors. Phys Chem Chem Phys, 19, 30332-30338(2017).

[24] P A Rodnyi, I V Khodyuk. Optical and luminescence properties of zinc oxide (Review). Opt Spectrosc, 111, 776-785(2011).

[25] X H Wang, S J Xu. Two-electron-satellite transition of donor bound exciton in ZnO: radiative Auger effect. Appl Phys Lett, 102, 181909(2013).

[26] S J Xu, S J Xiong, S L Shi. Resonant coupling of bound excitons with LO phonons in ZnO: excitonic polaron states and Fano interference. J Chem Phys, 123, 221105(2005).

[27] R Heitz, A Hoffmann, I Broser. Fe³⁺ center in ZnO. Phys Rev B, 45, 8977-8988(1992).

[28] D A Melnick. Zinc oxide photoconduction, an oxygen adsorption process. J Chem Phys, 26, 1136-1146(1957).

[29] Y Takahashi, M Kanamori, A Kondoh, H Minoura, Y Ohya. Photoconductivity of ultrathin zinc oxide Films. Jpn J Appl Phys, 33, 6611-6615(1994).

[30] T E Murphy, K Moazzami, J D Phillips. Trap-related photoconductivity in ZnO epilayers. J Electron Mater, 35, 543-549(2006).

[31] Z M Liao, Y Lu, J Xu, J M Zhang, D P Yu. Temperature dependence of photoconductivity and persistent photoconductivity of single ZnO nanowires. Appl Phys A, 95, 363-366(2009).

[32] S Lany, A Zunger. Anion vacancies as a source of persistent photoconductivity in Ⅱ-Ⅵ and chalcopyrite semiconductors. Phys Rev B, 72, 035215(2005).

[33] Y Kang, H H Nahm, S Han. Light-induced peroxide formation in ZnO: origin of persistent photoconductivity. Sci Rep, 6, 35148(2016).

[34] B T Jeffries, R Gonzalez, Y Chen, G P Summers. Luminescence in thermochemically reduced MgO: the role of hydrogen. Phys Rev B, 25, 2077-2080(1982).

[35] Y Li, M Gecevicius, J R Qiu. Long persistent phosphors—from fundamentals to applications. Chem Soc Rev, 45, 2090-2136(2016).

[36] A Janotti, C G Van de Walle. Fundamentals of zinc oxide as a semiconductor. Rep Prog Phys, 72, 126501(2009).

[37] F Oba, M Choi, A Togo, I Tanaka. Point defects in ZnO: an approach from first principles. Sci Technol Adv Mater, 12, 034302(2011).

[38] C G Van de Walle. Hydrogen as a cause of doping in Zinc Oxide. Phys Rev Lett, 85, 1012-1015(2000).

[39] D M Hofmann, A Hofstaetter, F Leiter, H J Zhou, F Henecker et al. Hydrogen: a relevant shallow donor in Zinc Oxide. Phys Rev Lett, 88, 045504(2002).

[40] H S Qiu, B Meyer, Y M Wang, C Wöll. Ionization energies of shallow donor states in ZnO created by reversible formation and depletion of H interstitials. Phys Rev Lett, 101, 236401(2008).

[41] R Dingle. Luminescent transitions associated with divalent copper impurities and the green emission from semiconducting Zinc Oxide. Phys Rev Lett, 23, 579-581(1969).

[42] N Y Garces, L Wang, L Bai, N C Giles, L E Halliburton. Role of copper in the green luminescence from ZnO crystals. Appl Phys Lett, 81, 622-624(2002).

[43] J D Ye, S L Gu, F Qin, S M Zhu, S M Liu et al. Correlation between green luminescence and morphology evolution of ZnO films. Appl Phys A, 81, 759-762(2005).

[44] J Čížek, J Valenta, P Hruška, O Melikhova, I Procházka et al. Origin of green luminescence in hydrothermally grown ZnO single crystals. Appl Phys Lett, 106, 251902(2015).

[45] S Prucnal, J D Wu, Y Berencén, M O Liedke, A Wagner et al. Engineering of optical and electrical properties of ZnO by non-equilibrium thermal processing: the role of zinc interstitials and zinc vacancies. J Appl Phys, 122, 035303(2017).

[46] D M Zhou, K R Kittilstved. Electron trapping on Fe³⁺ sites in photodoped ZnO colloidal nanocrystals. Chem Commun, 52, 9101-9104(2016).

[47] T X Chen, L Cao, W H Zhang, W Zhang, Y Y Han et al. Correlation between electronic structure and magnetic properties of Fe-doped ZnO films. J Appl Phys, 111, 123715(2012).