Opto-Electronic Advances, Volume. 1, Issue 6, 180011-1(2018)

Probing defects in ZnO by persistent phosphorescence

Honggang Ye1...2, Zhicheng Su1, Fei Tang1, Yitian Bao1, Xiangzhou Lao1, Guangde Chen2, Jian Wang1 and Shijie Xu1,* |Show fewer author(s)
Author Affiliations
  • 1Department of Physics, and Shenzhen Institute of Research and Innovation (HKU-SIRI), The University of Hong Kong, Pokfulam Road, Hong Kong, China
  • 2Department of Applied Physics, Xi'an Jiaotong University, Xi'an 710049, China
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    Figures & Tables(3)
    (Colour on-line) PL spectra of the ZnO bulk crystal at 10 K.(a) Full-range spectrum under the excitation of a 325 nm He-Cd laser. The inset reveals the detailed components of the sharp UV peak, including the principal lines of free exciton (FX), donor-bound exciton (DX) and two-electron satellites (TES), as well as their longitudinal optical (LO) phonon sidebands. (b) Defects induced visible emissions of the sample for the excitation wavelengths of 325 nm, 385 nm, and 450 nm.
    (a, b) (Colour on-line) Decaying traces of the visible luminescence of the sample at different temperatures after ceasing the 385 nm excitation. (c, d) show the recorded time-resolved phosphorescence images at 50 and 150 K, respectively.
    (Colour on-line) Variable-temperature PL spectra of the sample under the continuous excitation of 450 nm laser.
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    Honggang Ye, Zhicheng Su, Fei Tang, Yitian Bao, Xiangzhou Lao, Guangde Chen, Jian Wang, Shijie Xu. Probing defects in ZnO by persistent phosphorescence[J]. Opto-Electronic Advances, 2018, 1(6): 180011-1

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    Paper Information

    Received: May. 24, 2018

    Accepted: Jul. 19, 2018

    Published Online: Mar. 19, 2019

    The Author Email: Xu Shijie (sjxu@hku.hk)

    DOI:10.29026/oea.2018.180011

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