[1] [1] HAN Yi, LI Bing-sheng. H-ion irradiation-induced annealing in He-ion implanted 4H-SiC[J]. Chin Phys Lett, 2017, 1(34):19-22.

[2] [2] KarlssonA L H, HallénJ Birch. Atomically resolved microscopy of ion implantation induced dislocation loops in 4H-SiC[J]. Materials Letters, 2016(181): 325-327.

[4] [4] Krishna C Mandal. Characterization of semi-insulating 4H Silicon Carbide for radiation detectors[J]. IEEE Transactions on Nuclear Science, 2011, 58(4): 1992-1999P.

[5] [5] WU P, YOGANATHAN M, ZWIEBACK I. Defect evolution during growth of SiC crystals[J]. Cryst Growth, 2008(310): 1804P.

[6] [6] GAO F, WEBER W J, XIAO H Y, et al. Formation and properties of defects and small vacancy clusters in SiC: ab initio calculations[J]. Nuclear Instruments and Methods in Physics Research B, 2009(267): 2995P.

[7] [7] KONOPAKA A, Greulich-Weber S, DIEROLF V, et al. Microscopic structure and energy transfer of vacancy-related defect pairs with Erbium in wide-gap semiconductors[J]. Optical Material, 2011(33): 1041P.

[8] [8] KATOH Y, KONDO S, SNEAD L L. DC electrical conductivity of silicon carbide ceramics and composites for flow channel insert applications [J]. J Nucl Mater, 2009, 386/388: 639-642.

[10] [10] NORDLUND K, GHALY M, AVERBACK R S, et al. Defect production in collision cascades in elemental semiconductors and fcc metals[J]. Physical Review B, 1998, 7(13): 7556.

[11] [11] DEVANATHAN R, WEBER W J, GAO F. Atomic scale simulation of defect production in irradiated 3C-SiC[J]. Journal of Applied Physics, 2001, 90(5): 2303-2309.

[12] [12] PLIMPITON S. Fast parallel algorithms for short-range molecular dynamics [J]. Journal of Computational Physics, 1995, 117: 1-19.

[13] [13] TERSOFF J. Modeling solid chemistry: interatomic potentials for multi-component systems[J]. Physical Review B, 1989(39): 5666-5668P.

[14] [14] BIERSACK J P, ZIEGLER J F. Refined universal potentials in atomic collisions [J]. Nuclear Instruments and Methods, 1982(194): 93-100.

[15] [15] FARRELL D E, BERNSTEIN N, LIU W K. Thermal effects in 10 keV Si PKA cascades in 3C-SiC[J]. Nuclear Materials, 2009(385): 572-581P.

[16] [16] NOSE S. A unified formulation of the constant temperature molecular dynamics methods[J]. Journal of Chemical Physics, 1984, 81(1): 511-519P.

[17] [17] GAO F, WEBER W J. Atomic-scale simulation of 50 keV Si displacement cascades in β-SiC[J]. Physical Review B, 2000, 63(5): 054101.

[18] [18] DEVANATHAN R, WEBER W J. Displacement energy surface in 3C and 6H SiC[J]. Journal of Nuclear Materials, 2000, 278(2): 258-265.

[19] [19] GAO F, WEBER W J, JIANG W. Primary damage states produced by Si and Au recoils in SiC: A molecular dynamics and experimental investigation[J]. Physical Review B, 2001(63): 214106.

[21] [21] ZHANG Y, WEBER W J, JIANG W, et al. Effects of implantation temperature and ion flux on damage accumulation in Al-implanted 4H-SiC[J]. Journal of Applied Physics, 2003(93): 1954-1960.

[23] [23] ZHANG Y, GAO F. Damage accumulation and defect relaxation in 4H-SiC[J]. Physical Review B, 2004(70): 125203.