Electro-Optic Technology Application, Volume. 32, Issue 5, 45(2017)
Molecular Dynamics Simulation of 4H-SiC under Irradiation Defects Formation Mechanism
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HE Tao, HE Hong-yu, ZHOU Yuan, ZHU Wei-hua, CHEN Zhi-yong, WANG Xin-lin. Molecular Dynamics Simulation of 4H-SiC under Irradiation Defects Formation Mechanism[J]. Electro-Optic Technology Application, 2017, 32(5): 45
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Received: Oct. 12, 2017
Accepted: --
Published Online: Nov. 21, 2017
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