Optics and Precision Engineering, Volume. 25, Issue 1, 100(2017)

Atomic step morphology research of LED sapphire substrate polishing surface and its periodicity

ZHOU Yan1...2,3, PAN Guo-shun1,2,3, SHI Xiao-lei1,2,3, GONG Hua1,2,3, ZOU Chun-li1,2,3 and TANG Jiao-ning4 |Show fewer author(s)
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
  • show less
    References(22)

    [1] [1] ELENA R D, LEONID A L, VALERIAN P. Sapphire: Material, Manufacturing, Applications [M]. USA: Springer Science+Business Media, 2009, 1-153.

    [2] [2] FAN ZH G, LIU J J, XIAO H S, et al.. Research progress on growth technique and application of sapphire single crystal [J]. Journal of the Chinese Ceramic Society, 2011, 39(5): 880-891.(in Chinese)

    [3] [3] ZHOU ZH ZH, YUAN J L, WEN D SH. Survey on the progress of ultra-smooth sapphire wafer surface [J]. Aviation Precision Manufacturing Technology, 2009, 45(3): 8-13.(in Chinese)

    [4] [4] ZHANG B G, LIU Y L. Key technology and strategies in sapphire wafer processing [J]. Journal of synthetic crystals, 2016, 45(4): 859-567. (in Chinese)

    [5] [5] ZHU H L. Chemical Mechanical Polishing(CMP) of sapphire [D]. USA: the State University of New Jersey, 2002, 129-134.

    [6] [6] HU X K, SONG ZH T, PAN ZH C, et al.. Planarization machining of sapphire wafers with boron carbide and colloidal silica as abrasives [J]. Applied Surface Science, 2009(255): 8230-8234.

    [7] [7] XU L, ZOU CH L, SHI X L, et al.. Fe-Nx/C assisted chemical-mechanical polishing for improving the removal rate of sapphire[J].Applied Surface Science, 2015, 343: 115-120.

    [8] [8] WANG Y G, et al.. A Review on the CMP of SiC and sapphire wafers [J]. Advanced Materials Research, 2010(126-128): 429-434.

    [9] [9] ZHAO ZH W. The research on CMP technology of sapphire with nano surface [J]. New Technology, 2008, 2: 27-30.(in Chinese)

    [10] [10] ZHANG Z F, YAN W, ZHANG L, et al.. Effect of mechanical process parameters on friction behavior and material removal during sapphire chemical mechanical polishing [J]. Microelectron. Eng., 2011, 88: 3020-3023.

    [11] [11] AIDA H, DOI T, TAKEDA H, et al.. Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials [J]. Curr. Appl. Phys., 2012, 12: S41-S46.

    [12] [12] XU W H, LU X C, et al.. Effects of the ultrasonic flexural vibration onthe interaction between the abrasive particles; pad and sapphire substrate during chemical mechanical polishing(CMP) [J]. Appl. Surf. Sci., 2011, 257: 2905-2911.

    [13] [13] ZHANG Z F, LIU W L, SONG ZH T, et al.. Two-step chemical mechanical polishing of sapphire substrate [J]. Journal of the Electrochemical Society, 2010, 157, H688-691.

    [14] [14] XU W H, LU X C, et al.. Ultrasonic flexural vibration assisted chemical mechanical polishing for sapphire substrate [J]. Appl. Surf. Sci., 2010, 256, 3936-3940.

    [15] [15] WANG J B, ZHU Y W, WANG J S, et al.. Effect of lapping methods on subsurface damage depth of single crystal sapphire [J]. Journal of synthetic crystals, 2014, 43(5): 1099-1104.(in Chinese)

    [17] [17] WANG Y G, ZHANG L C.A review on the CMP of SiC and sapphire wafers [J]. Advanced Materials Research, 2010. 126-128, 429-424.

    [18] [18] LEE H, KASUGA H, OHMORI H, et al.. Application of electrolytic in-process dressing(ELID) grinding and chemical mechanical polishing(CMP) process for emerging hard-brittle materials used in light-emitting diodes [J]. J. Cryst. Growth, 2011, 326: 140-146.

    [19] [19] LIN Z C, HUANG W S, TSAI J S. A study of material removal amount of sapphire wafer in application of chemical mechanical polishing with different polishing pads [J]. Journal of Mechanical Science and Technology, 2012, 26(8): 2353-2364.

    [20] [20] ZHU H, TESSAROTO L A, SABIA R, et al.. Chemical mechanical polishing(CMP) anisotropy in sapphire [J]. Appl. Surf. Sci., 2004, 236: 120-130.

    [21] [21] ROGOV V V, RUBLEV N D, KROTENKO T L, et al.. A Study of Intensity of tribochemical contact interaction betweena polishing compound and sapphire in machining [J]. J. Superhard Mater., 2008, 30: 273-275.

    [22] [22] ZHOU Y, PAN G S, SHI X L, et al.. AFM and XPS studies on material removal mechanism of sapphire wafer during chemical mechanical polishing(CMP) [J]. Journal of Materials Science: Materials in Electronics, 2015, 26: 9921-9928.

    CLP Journals

    [1] ZENG Yi-bo, ZHANG Jie, XU Ma-hui, HAO Rui, SHEN Jie-nan, ZHOU hui, GUO Hang. Fabrication of substrate and film in MEMS using CMP[J]. Optics and Precision Engineering, 2018, 26(6): 1450

    [2] YANG Zheng, JIN Zhi-wei, CHEN Jian-jun, RAO Xian-hua, YIN Shao-yun, WU Peng. Polishing method for polyimide membranes based on reactive ion etching[J]. Optics and Precision Engineering, 2019, 27(2): 302

    [3] ZHOU Ping, WANG Ze-hong, HAN Xiao-long, JIN Zhu-ji. Adhesive mounting deformation of ultra-thin quartz workpiece in polishing[J]. Optics and Precision Engineering, 2019, 27(11): 2402

    [4] ZHANG Hai-jun, CHEN Jia-jun, WANG Ying-da, YOU Qing-yang. Development of wirelessly controlled atomic force microscope[J]. Optics and Precision Engineering, 2018, 26(9): 2205

    Tools

    Get Citation

    Copy Citation Text

    ZHOU Yan, PAN Guo-shun, SHI Xiao-lei, GONG Hua, ZOU Chun-li, TANG Jiao-ning. Atomic step morphology research of LED sapphire substrate polishing surface and its periodicity[J]. Optics and Precision Engineering, 2017, 25(1): 100

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Jun. 10, 2016

    Accepted: --

    Published Online: Mar. 10, 2017

    The Author Email:

    DOI:10.3788/ope.20172501.0100

    Topics