Microelectronics, Volume. 54, Issue 2, 282(2024)

Gate Charge Characterization Method for p-GaN HEMTs

LIU Zhen1... PAN Xiaofei2, GONG Ping2, WANG Yanping1, YE Sican1, LU Ao1, and YAN Dawei13 |Show fewer author(s)
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    References(11)

    [1] [1] GERSTNER H, ENDRUSCHAT A, HECKEL T, et al. Non-linear input capacitance determination of WBG power FETs using gate charge measurements [C] //2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications, Atlanta, GA, USA. 2018:247-253.

    [3] [3] SAXENA R S, KUMAR M J. Polysilicon spacer gate technique to reduce gate charge of a trench power MOSFET [J]. IEEE Transactions on Electron Devices, 2012, 59(3): 738-744.

    [5] [5] ZHANG G D, HE Y H, YU S L, et al. Switching transition modeling of eGaN HEMT in power converters [J]. IEEE Transactions on Power Electronics, 2023, 38(4): 4251-4256.

    [8] [8] WANG J, CHEN Z F, YOU S Z, et al. Surfacepotential-based compact model for the gate current of p-GaN gate HEMTs [J]. IEEE Transactions on Electron Devices, 2020, 67(9): 3564-3567.

    [9] [9] NUO M, WEI J, WANG M J, et al. Gate/Drain coupled barrier lowering effect and negative threshold voltage shift in schottky-type p-GaN gate HEMT [J].IEEE Transactions on Electron Devices, 2022, 69(7):3630-3635.

    [10] [10] XIN Y J, CHEN W J, SUN R Z, et al. Experimental demonstration of an integrated bidirectional gate ESD protection structure for p-GaN power HEMTs [J].IEEE Electron Device Letters, 2023, 44(2): 209-212.

    [11] [11] CHAO X, WANG L Y, LI X H, et al. The ID instability induced by reverse conduction stress in p-GaN gate HEMTs [J]. IEEE Electron Device Letters,2023, 44(8): 1264-1267.

    [12] [12] ZHANG L, ZHENG Z Y, YANG S, et al. p-GaN gate HEMT with surface reinforcement for enhanced gate reliability [J]. IEEE Electron Device Letters,2021, 42(1): 22-25.

    [13] [13] XIN Y J, CHEN W J, SUN R Z, et al. Barrier lowering-induced capacitance increase of short-channel power p-GaN HEMTs at high temperature [J]. IEEE Transactions on Electron Devices, 2022, 69(3): 1176-1180.

    [14] [14] YANG S, HUANG S, WEI J, et al. Identification of trap states in p-GaN layer of a p-GaN/AlGaN/GaN power HEMT structure by deep-level transient spectroscopy [J]. IEEE Electron Device Letters,2020, 41(5): 685-688.

    [15] [15] WU Q S, CHEN J, HE L, et al. Charge control in Schottky-type p-GaN gate HEMTs with partially and fully depleted p-GaN conditions [J]. IEEE Transactions on Electron Devices, 2022, 69(5): 2262-2269.

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    LIU Zhen, PAN Xiaofei, GONG Ping, WANG Yanping, YE Sican, LU Ao, YAN Dawei. Gate Charge Characterization Method for p-GaN HEMTs[J]. Microelectronics, 2024, 54(2): 282

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    Paper Information

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    Received: Aug. 24, 2023

    Accepted: --

    Published Online: Aug. 21, 2024

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.230326

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