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Microelectronics, Volume. 54, Issue 2, 282(2024)

Gate Charge Characterization Method for p-GaN HEMTs

LIU Zhen1... PAN Xiaofei2, GONG Ping2, WANG Yanping1, YE Sican1, LU Ao1, and YAN Dawei13 |Show fewer author(s)
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    LIU Zhen, PAN Xiaofei, GONG Ping, WANG Yanping, YE Sican, LU Ao, YAN Dawei. Gate Charge Characterization Method for p-GaN HEMTs[J]. Microelectronics, 2024, 54(2): 282

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    Received: Aug. 24, 2023

    Accepted: --

    Published Online: Aug. 21, 2024

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.230326

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology