Acta Photonica Sinica, Volume. 49, Issue 6, 0604002(2020)

Preparation and Optimization of Photosensitive Gate GaN-based High Electron Mobility Transistor Devices

Yan-xu ZHU*... Yan-xu ZHU*, Zhuang YANG, Hui-hui SONG, Lai-long LI, Zhong YANG, Qi-xuan LI and Tie-fan HU |Show fewer author(s)
Author Affiliations
  • Key Laboratory of Photoelectron Technology Ministry of Education, Beijing University of Technology, Beijing 100124, China
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    References(22)

    [8] Jin-lun LI, Shao-hui CUI, Jing ZHANG. Research of InP-based room temperature HEMT terahertz detector enhanced by butterfly antenna. Infrared and Laser Engineering, 48, 131-138(2019).

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    Yan-xu ZHU, Yan-xu ZHU, Zhuang YANG, Hui-hui SONG, Lai-long LI, Zhong YANG, Qi-xuan LI, Tie-fan HU. Preparation and Optimization of Photosensitive Gate GaN-based High Electron Mobility Transistor Devices[J]. Acta Photonica Sinica, 2020, 49(6): 0604002

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    Paper Information

    Category: Detectors

    Received: Dec. 16, 2019

    Accepted: Apr. 3, 2020

    Published Online: Nov. 26, 2020

    The Author Email: ZHU Yan-xu (zhuyx@bjut.edu.cn), ZHU Yan-xu (zhuyx@bjut.edu.cn)

    DOI:10.3788/gzxb20204906.0604002

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