Preparation and Optimization of Photosensitive Gate GaN-based High Electron Mobility Transistor Devices

Yan-xu ZHU; Yan-xu ZHU; Zhuang YANG; Hui-hui SONG; Lai-long LI; Zhong YANG; Qi-xuan LI; Tie-fan HU

doi:10.3788/gzxb20204906.0604002

Acta Photonica Sinica, Volume. 49, Issue 6, 0604002(2020)

Preparation and Optimization of Photosensitive Gate GaN-based High Electron Mobility Transistor Devices

Yan-xu ZHU^*, Yan-xu ZHU^*, Zhuang YANG, Hui-hui SONG, Lai-long LI, Zhong YANG, Qi-xuan LI, and Tie-fan HU

Key Laboratory of Photoelectron Technology Ministry of Education, Beijing University of Technology, Beijing 100124, China

show less

Abstract Get PDF(in Chinese)

References(22)

[1] ZHANG Xi-sheng, YAN Chun-yu, WU Ti-hui. Fabrication of CsPbBrI₂ quantum dots and its photodetector performance[J]. Acta Photonica Sinica, 49, 123002(2020).

[2] NANVER L, QI Lin, MOHAMMADI V. Robust UV/VUV/EUV pureB photodiode detector technology with High CMOS compatibility[J]. IEEE Journal of Selected Topics in Quantum Electronics, 20, 306-316(2014).

[3] YANG Zhen-qian, DENG Yu-hao, , . High-performance single-crystalline perovskite thin-film photodetector[J]. Advanced Materials, 30, 1704333(2018).

[4] AMBACHER O, FOUTZ B, SMART J. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures[J]. Journal of Applied Physics, 87, 334-344(2000).

[5] CLAIRE G, HOCK M N, GEORGE CHU S N. Intersubband absorption at λ1.55μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers[J]. Applied Physics Letters, 77, 3722-3724(2000).

[6] ZHU J, ZHOU X, JING L. Piezotronic effect modulated flexible AlGaN/GaN high-electron-mobility transistors[J]. ACS Nano, 13, 13161-13168(2019).

[7] CHEN C C, CHEN H I, LIU I P. Enhancement of hydrogen sensing performance of a GaN-based Schottky diode with a hydrogen peroxide surface treatment[J]. Sensors and Actuators B:Chemical, 211, 303-309(2015).

[8] LI Jin-lun, CUI Shao-hui, ZHANG Jing. Research of InP-based room temperature HEMT terahertz detector enhanced by butterfly antenna[J]. Infrared and Laser Engineering, 48, 131-138(2019).

[9] KHAN F, KHAN W, KIM S D. High-performance ultraviolet light detection using nano-scale-fin isolation AlGaN/GaN heterostructures with ZnO nanorods[J]. Nanomaterials, 9, 9030440(2019).

[10] HU Zhi-jun, TIAN Ming-wen, NYSTEN B. Regular arrays of highly ordered ferroelectric polymer nanostructures for non-volatile low-voltage memories[J]. Nature Materials, 8, 62-67(2008).

[11] BUTLER K T, FROST J M, WALSH A. Ferroelectric materials for solar energy conversion:photoferroics revisited[J]. Energy & Environmental Science, 8, 838-848(2015).

[12] CAI Tian-yi, JU Sheng. Photovoltaic effect in ferroelectrics[J]. Acta Physica Sinica, 67, 157081(2018).

[13] HAMATANI T, SHIRAHATA Y, OHISHI Y. Arsenic and chlorine co-doping to CH3NH3PbI3 perovskite solar cells[J]. Advances in Materials Physics and Chemistry, 7, 1-10(2017).

[14] ZENKEVICH A V, MATVEYEV Yu, MAKSIMOVA K. Giant bulk photovoltaic effect in thin ferroelectric BaTiO₃ films[J]. Physical Review B, 90, 161409(2014).

[15] LI Xiong, YI Chen-yi, LUO Jing-shan. Improved performance and stability of perovskite solar cells by crystal crosslinking with alkylphosphonic acid ω -ammonium chlorides[J]. Nature Chemistry, 7, 703-711(2015).

[16] LEE Chun-hsun, LIN Wei-ren, LEE Yu-hsuan. Characterizations of enhancement-mode double heterostructure GaN HEMTs with gate field plates[J]. IEEE Transactions on Electron Devices, 65, 488-492(2018).

[17] TAKAYUKI T, MASAKI M, TAKAYUKI K. Fabrication of L10-FeNi phase by sputtering with rapid thermal annealing[J]. Journal of Alloys & Compounds, 750, 164-170(2018).

[18] ZHENG Fen-gang, CHEN Jian-ping, LI Xin-wan. Improved dielectric and ferroelectric characteristics of highly (111)-oriented Pb(Zr0.52Ti0.48)O3 films produced by Sol-Gel method[J]. Acta Physica Sinica, 55, 3076-3072(2006).

[19] SUN Ke-xue, ZHANG Shu-yi, SHUI Xiu-ji. Experimental and numerical study on transverse piezoelectricity of x BiInO 3-(1-x)PbTiO₃ films by multilayer cantilevers[J]. Japanese Journal of Applied Physics, 57, 025801(2018).

[20] SUN En-wei, ZHANG Rui, ZHAO Xin. Electro-optic properties of relaxor ferroelectric 0.93Pb(Zn_1/3Nb_2/3)O₃-0.07PbTiO₃ single crystal[J]. Acta Photonica Sinica, 38, 1442-1445(2009).

[21] QIAO Hong, YUAN Jian, XU Zai-quan. Broadband photodetectors based on graphene-Bi₂Te₃ heterostructure[J]. ACS Nano, 9, 1886-1894(2015).

[22] PARK P S, RAJAN S. Simulation of short-channel effects in N-and Ga-Polar AlGaN/GaN HEMTs[J]. IEEE Transactions on Electron Devices, 58, 704-708(2011).

Tools

Get Citation

Copy Citation Text

Yan-xu ZHU, Yan-xu ZHU, Zhuang YANG, Hui-hui SONG, Lai-long LI, Zhong YANG, Qi-xuan LI, Tie-fan HU. Preparation and Optimization of Photosensitive Gate GaN-based High Electron Mobility Transistor Devices[J]. Acta Photonica Sinica, 2020, 49(6): 0604002

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Detectors

Received: Dec. 16, 2019

Accepted: Apr. 3, 2020

Published Online: Nov. 26, 2020

The Author Email: Yan-xu ZHU (zhuyx@bjut.edu.cn), Yan-xu ZHU (zhuyx@bjut.edu.cn)

DOI:10.3788/gzxb20204906.0604002

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology