Acta Photonica Sinica, Volume. 49, Issue 6, 0604002(2020)
Preparation and Optimization of Photosensitive Gate GaN-based High Electron Mobility Transistor Devices
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Fig. 4. Analysis of hysteresis loops for different growth conditions
Fig. 5. Schematic diagram of the PZT/GaN-based HEMT detector structure
Fig. 6. Illustration of the steps relevant to the fabrication of the grating electrode GaN-based HEMT device structure
Fig. 7. Dark and UV light output characteristic curves for the tested GaN-based HEMT devices
Fig. 8. Optical micrograph of the three kinds of different gate length devices
Fig. 9. Characteristic curves of the three different gate length devices
Table 1. PZT film experimental sample process parameters
View tableView in ArticleTable 1. PZT film experimental sample process parameters
Experimental sample Sputtering power/W Working pressure /Pa Sputtering time/h 1 100 1 1.50 2 200 1 0.75
Table 2. Annealing process parameters
View tableView in ArticleTable 2. Annealing process parameters
Experimental sample Annealing temperature/℃ Annealing time/min 1-A 650 3 1-B 700 3 1-C 750 3 2-A 650 3 2-B 700 3 2-C 750 3
Table 3. Parameter results of
Fig. 4(a) View tableView in ArticleTable 3. Parameter results of
Fig. 4(a) Annealing temperature/℃ Saturation polarization/(μC·cm－2) Remnant polarization/(μC·cm－2) Coercive field/(kV·cm－1) 650 30.6 9.3 37.0 700 65.3 20.4 31.5 750 50.8 12.4 33.7
Table 4. Parameter results of
Fig. 4(b) View tableView in ArticleTable 4. Parameter results of
Fig. 4(b) Annealing temperature/℃ Saturation polarization/(μC·cm－2) Remnant polarization/(μC·cm－2) Coercive field/(kV·cm－1) 650 36.0 7.1 32.3 700 84.0 38.0 37.3 750 62.6 17.4 30.5
Table 5. Device structure parameters for the three different gate lengths
View tableView in ArticleTable 5. Device structure parameters for the three different gate lengths
Sample label Gate length( L G/μm)Gate source spacing( L GS/μm)Gatedrain spacing( L GD/μm)A 1 3 4 B 2 3 4 C 3 3 4
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Yan-xu ZHU, Yan-xu ZHU, Zhuang YANG, Hui-hui SONG, Lai-long LI, Zhong YANG, Qi-xuan LI, Tie-fan HU. Preparation and Optimization of Photosensitive Gate GaN-based High Electron Mobility Transistor Devices[J]. Acta Photonica Sinica, 2020, 49(6): 0604002
Paper Information
Category: Detectors
Received: Dec. 16, 2019
Accepted: Apr. 3, 2020
Published Online: Nov. 26, 2020
The Author Email: ZHU Yan-xu (zhuyx@bjut.edu.cn), ZHU Yan-xu (zhuyx@bjut.edu.cn)
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