Influence of the upper waveguide layer thickness on optical field in asymmetric heterostructure quantum well laser diode

Peixu Li; Kai Jiang; Shuqiang Li; Wei Xia; Xin Zhang; Qingmin Tang; Zhongxiang Ren; Xiangang Xu

doi:10.3788/COL20100805.0493

Chinese Optics Letters, Volume. 8, Issue 5, 493(2010)

Influence of the upper waveguide layer thickness on optical field in asymmetric heterostructure quantum well laser diode

Peixu Li^1,2, Kai Jiang^1,2, Shuqiang Li^1,2, Wei Xia^1,2, Xin Zhang², Qingmin Tang², Zhongxiang Ren², and Xiangang Xu^1,2

Author Affiliations

¹State Key Laboratory of Crystal Material, Shandong University, Ji'nan 250100, China

²Shandong Huaguang Optoelectronics Co., Ltd., Ji'nan 250101, China

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Peixu Li, Kai Jiang, Shuqiang Li, Wei Xia, Xin Zhang, Qingmin Tang, Zhongxiang Ren, Xiangang Xu. Influence of the upper waveguide layer thickness on optical field in asymmetric heterostructure quantum well laser diode[J]. Chinese Optics Letters, 2010, 8(5): 493

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Paper Information

Received: Sep. 17, 2009

Accepted: --

Published Online: May. 11, 2010

The Author Email:

DOI:10.3788/COL20100805.0493

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology