Semiconductor Optoelectronics, Volume. 43, Issue 3, 517(2022)

Effect of ScAlN Buffer Layer Thickness on GaN Epitaxial Layer on Si(100) Substrate

YIN Haotian1... DING Guangyu1, HAN Jun2, XING Yanhui1 and DENG Xuguang3 |Show fewer author(s)
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  • 1[in Chinese]
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  • 3[in Chinese]
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    References(8)

    [1] [1] Jin X M, Trieu S, Chavoor G J, et al. Enhancing GaN LED efficiency through nanogratings and standing wave analysis[J]. Nanomaterials, 2018, 8(12): 1045.

    [3] [3] Peart M R, Borovac D, Sun W, et al. AlInN/GaN diodes for power electronic devices[J]. Appl. Phys. Express, 2020, 13(9): 091006.

    [4] [4] Tripathy S, Lin V K X, Dolmanan S B, et al. AlGaN/GaN twodimensionalelectron gas heterostructures on 200mm diameter Si(111)[J]. Appl. Phys. Lett., 2012, 101(8): 082110.

    [5] [5] Schulze F, Dadgar A, Blsing J, et al. GaN heteroepitaxy on Si(001)[J]. J. of Crystal Growth, 2004, 272: 496499.

    [6] [6] Zhang S, Fu W Y, Holec D, et al. Elastic constants and critical thicknesses of ScGaN and ScAlN[J]. J. of Appl. Phys., 2013, 114(24): 243516.

    [10] [10] Liu Y, Yang Z L, Long X J, et al. Effects of thickness and interlayer on optical properties of AlN films at room and high temperature[J]. J. of Vacuum Science & Technol. A, 2021, 39(4): 043402.

    [11] [11] Lee S R, West A M, Allerman A A, et al. Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers[J]. Appl. Phys. Lett., 2005, 86(24): 241904.

    [12] [12] Kisielowski C, Krüger J, Ruvimov S, et al. Strainrelated phenomena in GaN thin films[J]. Phys. Rev. B, 1996, 54(24): 1774517753.

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    YIN Haotian, DING Guangyu, HAN Jun, XING Yanhui, DENG Xuguang. Effect of ScAlN Buffer Layer Thickness on GaN Epitaxial Layer on Si(100) Substrate[J]. Semiconductor Optoelectronics, 2022, 43(3): 517

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    Paper Information

    Special Issue:

    Received: Jan. 28, 2022

    Accepted: --

    Published Online: Aug. 1, 2022

    The Author Email:

    DOI:10.16818/j.issn1001-5868.2022012802

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