Semiconductor Optoelectronics, Volume. 43, Issue 3, 517(2022)
Effect of ScAlN Buffer Layer Thickness on GaN Epitaxial Layer on Si(100) Substrate
ScAlN thin films were first prepared on Si (100) substrate by pulsed DC magnetron sputtering. Then, GaN thin films were epitaxial grown on Si (100) substrate with metalorganic chemical vapor deposition (MOCVD) by using ScAlN as the buffer layer. The influence of the thickness of ScAlN buffer layer on ScAlN buffer layer and GaN epitaxial layer is investigated by high resolution Xray diffraction, atomic force microscopy (AFM) and Raman spectroscopy. The results show that the thickness of ScAlN buffer layer is an important factor affecting the crystal quality of GaN thin films. With the increase of ScAlN thickness, the full width at half maximum (FWHM) of ScAlN (002) Xray diffraction rocking curve continues to decrease, and the FWHM of GaN (002) Xray diffraction rocking curve first decreases and then increases. When the thickness of ScAlN buffer layer is 500nm, the crystal quality of GaN is the best, the FWHM of GaN (002) Xray diffraction rocking curve is 0.38°, and the tensile stress calculated by Raman spectrum is 398.38MPa.
Get Citation
Copy Citation Text
YIN Haotian, DING Guangyu, HAN Jun, XING Yanhui, DENG Xuguang. Effect of ScAlN Buffer Layer Thickness on GaN Epitaxial Layer on Si(100) Substrate[J]. Semiconductor Optoelectronics, 2022, 43(3): 517
Special Issue:
Received: Jan. 28, 2022
Accepted: --
Published Online: Aug. 1, 2022
The Author Email: