[1] [1] Higashiwaki M, Sasaki K, Murakami H, et al. Recent progress in Ga2O3 power devices[J]. Semiconductor Science and Technol., 2016, 31(3): 034001.

[2] [2] Mu Wenxiang. Research on growth, processing and properties of βGa2O3 single crystal[D]. Jinan: Shan Dong University, 2018.

[3] [3] Wang Wei, Chu Futong, Yue Chao, et al. Research on the molecular beam epitaxial growth of βGa2O3 thin film and its ultraviolet photosensitivity[J]. Electronic Components and Materials, 2013, 32(5): 1719.

[4] [4] Murakami H, Nomura K, Goto K, et al. Homoepitaxial growth of βGa2O3 layers by halide vapor phase epitaxy[J]. Appl. Phys. Express, 2015, 8: 015503.

[5] [5] Xiong Zening, Xiu Xiangqian, Li Yuewen, et al. Growth of βGa2O3 films on sapphire by hydride vapor phase epitaxy[J]. Chinese Phys. Lett., 2018, 35(5): 162164.

[6] [6] Nomura K, Goto K, Togashi R, et al. Thermodynamic study of βGa2O3 growth by halide vapor phase epitaxy[J]. J. of Crystal Growth, 2014, 405: 1922.

[7] [7] Ye Dalun, Hu Jianhua. Handbook of Thermodynamic Data for Practical Inorganics[M]. 2nd Edi. Beijing: Metallurgical Industry Press, 2002: 391.

[8] [8] Carl L·Yaws. Matheson Gas Data Manual[M]. 7th Edi. Beijing: Chemical Industry Press, 2003: 933.

[9] [9] Jiang Weijun. Principles of Chemical Engineering. Volume Ⅱ[M]. 2nd Edi. Beijing: Tsinghua University Press, 2003: 1718.

[10] [10] Safvi S A, Perkins N R, Horton M N, et al. Effect of reactor geometry and growth parameter on the uniformity and material properties[J]. J. of Crystal Growth, 1997, 182: 233237.

[11] [11] Jing Jie. Design and optimization of HVPE reactor based on numerical simulation[D]. Nanjing: Nanjing University of Posts and Telecommun., 2016.

[12] [12] Oshima Y, V Llora E G, Shimamura K. Quasiheteroepitaxial growth of βGa2O3 on offangled sapphire (0001) substrates by halide vapor phase epitaxy[J]. J. of Crystal Growth, 2015, 410: 5358.

[13] [13] Zhang Hong, Zuo Ran. Effects of changes in reaction kinetic parameters on the simulation of the reaction path of GaN grown by MOVPE[J]. Science China: Technical Sciences, 2017(6): 4557.

[14] [14] Nikolaev V I, Pechnikov A I, Stepanov S I, et al. Epitaxial growth of (201) βGa2O3 on (0001) sapphire substrates by halide vapour phase epitaxy[J]. Materials Science in Semiconductor Proc., 2016, 47: 1619.