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Semiconductor Optoelectronics, Volume. 41, Issue 4, 527(2020)

Optimization of Flow Field and Reaction Parameters in the Growth Simulation of Gallium Oxide

DAI Bisheng1, CHEN Lin1,2, TAO Zhikuo1, and XIU Xiangqian2
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    DAI Bisheng, CHEN Lin, TAO Zhikuo, XIU Xiangqian. Optimization of Flow Field and Reaction Parameters in the Growth Simulation of Gallium Oxide[J]. Semiconductor Optoelectronics, 2020, 41(4): 527

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    Received: Jan. 14, 2020

    Accepted: --

    Published Online: Aug. 18, 2020

    The Author Email:

    DOI:10.16818/j.issn1001-5868.2020.04.015

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology