Fig. 1. Nano-measurement traceability transfer chain

Fig. 2. Self-traceability characteristics of atom lithography grating

Fig. 3. Atom lithography 2.0 system of Tongji university and its light path

Fig. 4. Gradation certificate of national certified first-class reference material of one-dimensional 212.8 nm chromium grating

Fig. 5. Scanning atom lithography principle

Fig. 6. Scanning atom lithography grating 10 μm× 10 μm AFM image， and peak to valley height in the Gaussian direction

Fig. 7. （a） Schematic diagram of splicing atom lithography； （b） Splicing atom lithography schematic； （c） Two splicing atom lithography optical images and AFM images of P₁ to P₇； （d） Peaks to valleys height along grating in direction of standing wave field from left to right

Fig. 8. Schematic diagram of two-step deposition of atom lithography

Fig. 9. （a） AFM image of atom lithography grating prepared by two-step deposition； （b） Diamond-shaped structure formed by two-dimensional atom lithography grating

Fig. 10. Schematic diagram of soft X-ray interference lithography

Fig. 11. Influence of grating height and grating structure ratio R on diffraction efficiency

Fig. 12. Size design of mask substrate

Fig. 13. Schematic diagram of mask

Fig. 14. AFM image of one dimensional 106.4 nm grating

Fig. 15. One dimensional 53.2 nm grating

Fig. 16. Gradation certificate of national certified reference material of one-dimensional 106.4 nm silicon grating

Fig. 17. （a） SEM image with of grating sample； （b） Averaged profile of the SEM image along the y direction； （c） Position deviation curve indicating the scanner distortion of the SEM；（d） Calibrated pixel size of the SEM along the fast scan direction （x）； The dashed line indicates the nominal pixel size given by SEM； （e） Scaling factor， k=P_SEM/P_Ref， of SEM calibrated at 10 different randomly selected locations of gratings

Fig. 18. Line width diagram

Fig. 19. Multilayer film line width preparation process

Fig. 20. Image of cut silicon wafer

Fig. 21. AFM image of thermocompression bonded sample

Fig. 22. Si/SiO₂ multilayer grating sample

Fig. 23. National standard substance classification certificate for multi-structured silicon nanowire width

Fig. 24. Self-traceability of amorphous silicon linewidth calibration

Fig. 25. Calibration diagram of amorphous silicon line width

Fig. 26. TEM images of different part of multilayer structures

Fig. 27. （a） Reproduction of TEM image of CD after contrast adjustment； （b） Image intensity profile of TEM image at specified line along Y axis in （a）

Fig. 28. Film layer design and linewidth area AFM images of multilayer film probe calibrator