Infrared and Laser Engineering, Volume. 44, Issue 3, 951(2015)

Mesa etching process for InAs/GaSb SLs grown by MBE

Yao Guansheng1,2、*, Zhang Lixue1,3, Zhang Xiangfeng1,2, Zhang Liang1,2, and Zhang Lei1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    References(12)

    [1] [1] Rogalski A, Antoszewski J, Faraone L. Third-generation infrared photodetector arrays[J]. J Appl Phys, 2009, 105(091101): 1-44.

    [2] [2] Guo Jie, Liu Yingkai, Peng Zhenyu, et al. Sulphur passivation of type Ⅱ InAs/GaSb superlattice MWIR photodiodes[J]. Infrared and Laser Engineering, 2011, 40(9): 1614-1617.(in Chinese)

    [3] [3] Cabanski W, Munzberg M, Rode W, et al. Third generation focal plane array IR detection modules and applications[C]//SPIE, 2005, 5783: 340-348.

    [4] [4] Kim H S, Plis E, Rodriguez J B, et al. Mid-IR focal plane array based on type-II InAs/GaSb strain layer superlattice detector with nBn design[J]. Appl Phys Lett, 2008, 92: 183502.

    [5] [5] Xu Yingqiang, Tang Bao, Wang Guowei, et al. 2-5 μm InAs/GaSb superlattices infrared photodetector[J]. Infrared and Laser Engineering, 2011,40(8): 1403-1406.

    [6] [6] Walthera M, Schmitza J, Rehma R, et al. Growth of InAs/GaSb short-period superlattices for highresolution mid-wavelength infrared focal plane array detectors[J]. Journal of Crystal Growth, 2005, 278: 156-161.

    [7] [7] Chen Huijuan, Guo Jie, Ding Jiaxin, et al. Study of mesa etching for a InAs/GaSb superlattice infrared detector[J]. Micronanoelectronic Technology, 2008, 45(5): 298-301.

    [8] [8] Zhang Xiangfeng, Zhang Lixue, Zhang Hongfei, et al. Study on ICP dry etching of GaSb and InAs/GaSb super lattices[C]//SPIE, 2012, 8419: 84191C1-8.

    [9] [9] Chen Yongyuan, Deng Jun, Shi Yanli, et al. ICP etching in InAs/GaSb typeⅡsuperlattice infrared detector material[J]. Infrared and Laser Engineering, 2013, 42(2): 433-437. (in Chinese)

    [10] [10] Partha Dutta, Jeffery Langer, Vinay Bhagwat, et al. Dry etching, surface passivation and capping processes for antimonide based photodetectors[C]//SPIE, 2005, 5783: 98-105.

    [11] [11] Behr D, Wagner J, Schmitz J, et al. Resnant raman scattering and spectral ellipsometry on InAs/GaSb superlattices with different interfaces[J]. Appl Phys Lett, 1994, 65: 2972-2974.

    [12] [12] Andrew D Hood. Surface passivation and performance characteris-tics of type-II InAs/GaSb superlattice infrared photodetectors for focal plane arrays[D]. Evanston: Northwestern University, 2007: 95-96.

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    Yao Guansheng, Zhang Lixue, Zhang Xiangfeng, Zhang Liang, Zhang Lei. Mesa etching process for InAs/GaSb SLs grown by MBE[J]. Infrared and Laser Engineering, 2015, 44(3): 951

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    Paper Information

    Category: 光电器件与材料

    Received: Jul. 8, 2014

    Accepted: Aug. 11, 2014

    Published Online: Jan. 26, 2016

    The Author Email: Guansheng Yao (caojian820919@163.com)

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