Effects of gallium surfactant on AlN thin films by microwave plasma chemical vapor deposition

Lu Wang; Xulei Qin; Li Zhang; Kun Xu; Feng Yang; Shaoqian Lu; Yifei Li; Bosen Liu; Guohao Yu; Zhongming Zeng; Baoshun Zhang

doi:10.1088/1674-4926/24020017

Journal of Semiconductors, Volume. 45, Issue 9, 092501(2024)

Effects of gallium surfactant on AlN thin films by microwave plasma chemical vapor deposition

Lu Wang^1,2, Xulei Qin^1、*, Li Zhang^2、**, Kun Xu², Feng Yang², Shaoqian Lu^1,2, Yifei Li^1,2, Bosen Liu², Guohao Yu², Zhongming Zeng², and Baoshun Zhang^2、***

Author Affiliations

¹School of Physics, Changchun University of Science and Technology, Changchun 130013, China

²Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

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References(43)

[1] L Zhao, K Yang, Y J Ai et al. Crystal quality improvement of sputtered AlN film on sapphire substrate by high-temperature annealing. J Mater Sci Mater Electron, 29, 13766(2018).

[2] C J Zollner, A Almogbel, Y F Yao et al. Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition. Appl Phys Lett, 115, 161101(2019).

[3] L Gautam, J Lee, G Brown et al. Low dark current deep UV AlGaN photodetectors on AlN substrate. IEEE J Quantum Electron, 58, 4000205(2022).

[4] J R Grandusky, Y J Cui, M C Mendrick et al. Reliability and performance of pseudomorphic ultraviolet light emitting diodes on bulk aluminum nitride substrates. Phys Status Solidi C, 8, 1528(2011).

[5] M Wei, Y Liu, Y H Qu et al. Development of temperature sensor based on AlN/ScAlN SAW resonators. Electronics, 12, 3863(2023).

[6] M Chirumamilla, T Krekeler, D Y Wang et al. Magnetron sputter deposition of nanostructured AlN thin films. Appl Nano, 4, 280(2023).

[7] A J McLeod, S T Ueda, P C Lee et al. Pulsed chemical vapor deposition for crystalline aluminum nitride thin films and buffer layers on silicon and silicon carbide. Thin Solid Films, 768, 139717(2023).

[8] E D Wang, H Zhang, X J Xie et al. AlN thin films grown on different substrates by metal nitride vapor phase epitaxy. Cryst Res Technol, 58, 2200196(2023).

[9] J Z Hu, L Yan, N Zhou et al. Study of AlN growth using AMEC Prismo HiT3 MOCVD reactor. J Cryst Growth, 626, 127463(2024).

[10] D B Li, K Jiang, X J Sun et al. AlGaN photonics: Recent advances in materials and ultraviolet devices. Adv Opt Photonics, 10, 43(2018).

[11] M Kneissl, T Y Seong, J Han et al. The emergence and prospects of deep-ultraviolet light-emitting diode technologies. Nat Photonics, 13, 233(2019).

[12] H Amano, R Collazo, C De Santi et al. The 2020 UV emitter roadmap. J Phys D Appl Phys, 53, 503001(2020).

[13] Q H Zhang, H Parimoo, E Martel et al. Vertical semiconductor deep ultraviolet light emitting diodes on a nanowire-assisted aluminum nitride buffer layer. Sci Rep, 12, 7230(2022).

[14] N Nallusamy, R Singhal, S K Sharma et al. High-electron-mobility transistor-inspired freestanding AlGaN/GaN/AlN optical waveguide for high-pressure sensing applications. Phys Status Solidi A, 220, 2200637(2023).

[15] H Honda, S Umeda, K Shojiki et al. 229 nm far-ultraviolet second harmonic generation in a vertical polarity inverted AlN bilayer channel waveguide. Appl Phys Express, 16, 062006(2023).

[16] X J Wang, S Zhao, H H Fang et al. Quantum emitters with narrow band and high debye–waller factor in aluminum nitride written by femtosecond laser. Nano Lett, 23, 2743(2023).

[17] B H Lin, Y Cai, Y X Wang et al. Effects of growth temperature and reactor pressure on AlN thin film grown by metal-organic chemical vapor deposition. Thin Solid Films, 783, 140037(2023).

[18] K Shojiki, K Uesugi, S Y Xiao et al. Polarity control of sputter-deposited AlN with high-temperature face-to-face annealing. Mater Sci Semicond Process, 166, 107736(2023).

[19] P V Seredin, D L Goloshchapov, N A Kurilo et al. Comparative studies of nanoscale columnar AlxGa1-xN/AlN heterostructures grown by plasma-assisted molecular-beam epitaxy on cSi, porSi/cSi and SiC/porSi/cSi substrates. Opt Mater, 145, 114451(2023).

[20] R Saha, J Anderson, M W Holtz et al. Atomic layer deposition of Al2O3 interlayer for improving AlN growth on silicon substrates. J Vac Sci Technol A Vac Surf Films, 41, 053208(2023).

[21] S Raghuvansy, J P McCandless, M Schowalter et al. Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy. APL Mater, 11, 111113(2023).

[22] Y Zhang, Y H Xing, J Han et al. Improving AlN crystalline quality by high-temperature ammonia-free microwave plasma chemical vapor deposition. Appl Phys Express, 14, 055503(2021).

[23] Y H Xing, S Y Dong, X Zhang et al. Effect of H plasma treatment of the nucleation layer on AlN epitaxy in microwave plasma chemical vapor deposition. Cryst Growth Des, 23, 2257(2023).

[24] N Grandjean, J Massies, V H Etgens. Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers. Phys Rev Lett, 69, 796(1992).

[25] S Keller, S Heikman, I Ben-Yaacov et al. Indium surfactant assisted growth of AlN/GaN heterostructures by metal-organic chemical vapor deposition. Phys Status Solidi Appl Res, 188, 775(2001).

[26] S Nicolay, E Feltin, J F Carlin et al. Indium surfactant effect on AlN∕GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions. Appl Phys Lett, 88, 151902(2006).

[27] L E Rodak, C M Miller, D Korakakis. Surfactant effects of indium on cracking in AlN/GaN distributed Bragg reflectors grown via metal organic vapor phase epitaxy. Superlattices Microstruct, 49, 52(2011).

[28] J Neugebauer. Surfactants and antisurfactants on group-III-nitride surfaces. Phys Status Solidi C, 6, 1651(2003).

[29] Z F Zhao, Y Li, X J Xia et al. Growth of high-quality 4H-SiC epitaxial layers on 4° off-axis C-face 4H-SiC substrates. J Cryst Growth, 531, 125355(2020).

[30] B Galizia, P Fiorenza, C Bongiorno et al. Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC). Microelectron Eng, 283, 112103(2024).

[31] K Narang, A Pandey, R Khan et al. High-quality AlN nucleation layer on SiC substrate grown by MOVPE: Growth, structural and optical characteristics. Mater Sci Eng B, 278, 115635(2022).

[32] P Wang, D Wang, Y T Bi et al. Quaternary alloy ScAlGaN: A promising strategy to improve the quality of ScAlN. Appl Phys Lett, 120, 012104(2022).

[33] H Wang, S L Li, H Xiong et al. The effect of AlN nucleation temperature on the growth of AlN films via metalorganic chemical vapor deposition. J Electron Mater, 41, 466(2012).

[34] E Cho, A Mogilatenko, F Brunner et al. Impact of AlN nucleation layer on strain in GaN grown on 4H-SiC substrates. J Cryst Growth, 371, 45(2013).

[35] L Zhang, J S Li, X G Deng et al. Effect of V–III ratio based growth mode on the surface morphology, strain relaxation, and dislocation density of AlN films grown by MOCVD. Phys Status Solidi B, 260, 2200279(2022).

[36] H L Chang, Z T Liu, S Y Yang et al. Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode. Light Sci Appl, 11, 88(2022).

[37] S Birgit, H Jerry, E Morse Daniel. Correlated compositions, structures, and photoluminescence properties of gallium nitride nanoparticles. Adv Mater Deerfield Beach Fla, 23, 2278(2011).

[38] M Frenklach. The role of hydrogen in vapor deposition of diamond. J Appl Phys, 65, 5142(1989).

[39] M A Laurent, M Malakoutian, S Chowdhury. A study on the nucleation and MPCVD growth of thin, dense, and contiguous nanocrystalline diamond films on bare and Si3N4-coated N-polar GaN. Semicond Sci Technol, 35, 015003(2020).

[40] K Sekiguchi, H Shirakawa, K Chokawa et al. Thermodynamic analysis of trimethylgallium decomposition during GaN metal organic vapor phase epitaxy. Jpn J Appl Phys, 57, 04FJ03(2018).

[41] B Wang, J Weng, Z T Wang et al. Investigation on the influence of the gas flow mode around substrate on the deposition of diamond films in an overmoded MPCVD reactor chamber. Vacuum(2020).

[42] Q S Chen, J H Gao, C Chen et al. Evolution of dislocations and strains in AlN grown by high-temperature metal–organic chemical vapor deposition. Cryst Growth Des, 24, 1784(2024).

[43] X H Li, Y O Wei, S Wang et al. Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition. J Cryst Growth, 414, 76(2015).

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Lu Wang, Xulei Qin, Li Zhang, Kun Xu, Feng Yang, Shaoqian Lu, Yifei Li, Bosen Liu, Guohao Yu, Zhongming Zeng, Baoshun Zhang. Effects of gallium surfactant on AlN thin films by microwave plasma chemical vapor deposition[J]. Journal of Semiconductors, 2024, 45(9): 092501

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Paper Information

Category: Articles

Received: Feb. 18, 2024

Accepted: --

Published Online: Oct. 11, 2024

The Author Email: Qin Xulei (XLQin), Zhang Li (LZhang), Zhang Baoshun (BSZhang)

DOI:10.1088/1674-4926/24020017

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