Journal of Semiconductors, Volume. 45, Issue 9, 092501(2024)
Effects of gallium surfactant on AlN thin films by microwave plasma chemical vapor deposition
Fig. 1. (Color online) (a) XRD spectra of Ga-assisted AlN films under varying TMGa flow rates respectively, (b) EDS spectra of Ga-assisted AlN sample S5.
Fig. 2. (Color online) (a)−(e) The cross-sectional SEM images of Ga-assisted AlN films grown under different TMGa flow rates and corresponding 5 × 5 μm2 AFM images, (f) Ga-assisted AlN growth rates as a function of Ga proportion.
Fig. 3. (a)−(f) SEM images of Ga-assisted AlN films grown with different Ga flow rates.
Fig. 4. (Color online) The results of the Raman spectroscopy measurement.
Fig. 5. SEM images of AlN nucleation morphology (a) without TMGa and (b) with 80% TMGa.
Fig. 6. (Color online) (a−c) Schematic diagram of Ga-assisted AlN growth, (d−f) W/O Ga-assisted AlN growth.
Fig. 7. (Color online) (a, b) X-ray rocking curves of AlN (002) and (102) planes of samples S1−S5, (c) the variation curves of the full width at FWHM of AlN (002) and (102) planes of samples S1−S5, (d) AlN growth rate and growth temperature as function of Ga proportion.
Fig. 8. (Color online) FWHM values of AlN (002) (a) and (102) (b) planes, surface morphology (c) and growth thickness (d) of Sample S6.
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Lu Wang, Xulei Qin, Li Zhang, Kun Xu, Feng Yang, Shaoqian Lu, Yifei Li, Bosen Liu, Guohao Yu, Zhongming Zeng, Baoshun Zhang. Effects of gallium surfactant on AlN thin films by microwave plasma chemical vapor deposition[J]. Journal of Semiconductors, 2024, 45(9): 092501
Category: Articles
Received: Feb. 18, 2024
Accepted: --
Published Online: Oct. 11, 2024
The Author Email: Qin Xulei (XLQin), Zhang Li (LZhang), Zhang Baoshun (BSZhang)