Journal of Semiconductors, Volume. 45, Issue 9, 092501(2024)

Effects of gallium surfactant on AlN thin films by microwave plasma chemical vapor deposition

Lu Wang1,2, Xulei Qin1、*, Li Zhang2、**, Kun Xu2, Feng Yang2, Shaoqian Lu1,2, Yifei Li1,2, Bosen Liu2, Guohao Yu2, Zhongming Zeng2, and Baoshun Zhang2、***
Author Affiliations
  • 1School of Physics, Changchun University of Science and Technology, Changchun 130013, China
  • 2Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
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    Figures & Tables(9)
    (Color online) (a) XRD spectra of Ga-assisted AlN films under varying TMGa flow rates respectively, (b) EDS spectra of Ga-assisted AlN sample S5.
    (Color online) (a)−(e) The cross-sectional SEM images of Ga-assisted AlN films grown under different TMGa flow rates and corresponding 5 × 5 μm2 AFM images, (f) Ga-assisted AlN growth rates as a function of Ga proportion.
    (a)−(f) SEM images of Ga-assisted AlN films grown with different Ga flow rates.
    (Color online) The results of the Raman spectroscopy measurement.
    SEM images of AlN nucleation morphology (a) without TMGa and (b) with 80% TMGa.
    (Color online) (a−c) Schematic diagram of Ga-assisted AlN growth, (d−f) W/O Ga-assisted AlN growth.
    (Color online) (a, b) X-ray rocking curves of AlN (002) and (102) planes of samples S1−S5, (c) the variation curves of the full width at FWHM of AlN (002) and (102) planes of samples S1−S5, (d) AlN growth rate and growth temperature as function of Ga proportion.
    (Color online) FWHM values of AlN (002) (a) and (102) (b) planes, surface morphology (c) and growth thickness (d) of Sample S6.
    • Table 1. Experimental parameters of AlN thin films prepared at different TMGa flow rates.

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      Table 1. Experimental parameters of AlN thin films prepared at different TMGa flow rates.

      SamplesMicrowave power (W)Pressure(Torr)H2(sccm)N2(sccm)TMGa(sccm)TMAl(sccm)Temperature (°C)Time (min)X−(Al1−xGaxN)
      S14800120135370035123990W/O Ga
      S2480012013537013512409012.5% Ga
      S3480012013537053512409041.8% Ga
      S44800120135370113511509061.2% Ga
      S54800120135370123511009080% Ga
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    Lu Wang, Xulei Qin, Li Zhang, Kun Xu, Feng Yang, Shaoqian Lu, Yifei Li, Bosen Liu, Guohao Yu, Zhongming Zeng, Baoshun Zhang. Effects of gallium surfactant on AlN thin films by microwave plasma chemical vapor deposition[J]. Journal of Semiconductors, 2024, 45(9): 092501

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    Paper Information

    Category: Articles

    Received: Feb. 18, 2024

    Accepted: --

    Published Online: Oct. 11, 2024

    The Author Email: Qin Xulei (XLQin), Zhang Li (LZhang), Zhang Baoshun (BSZhang)

    DOI:10.1088/1674-4926/24020017

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