A comprehensive review of recent progress on enhancement-mode β-Ga2O3 FETs: Growth, devices and properties

Botong Li; Xiaodong Zhang; Li Zhang; Yongjian Ma; Wenbo Tang; Tiwei Chen; Yu Hu; Xin Zhou; Chunxu Bian; Chunhong Zeng; Tao Ju; Zhongming Zeng; Baoshun Zhang

doi:10.1088/1674-4926/44/6/061801

Journal of Semiconductors, Volume. 44, Issue 6, 061801(2023)

A comprehensive review of recent progress on enhancement-mode β-Ga₂O₃ FETs: Growth, devices and properties

Botong Li^1,2, Xiaodong Zhang^1,2, Li Zhang¹, Yongjian Ma^1,2, Wenbo Tang^1,2, Tiwei Chen^1,2, Yu Hu^1,2, Xin Zhou², Chunxu Bian², Chunhong Zeng², Tao Ju², Zhongming Zeng^1,2, and Baoshun Zhang^1,2、*

Author Affiliations

¹School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China

²Nano Fabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

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Botong Li, Xiaodong Zhang, Li Zhang, Yongjian Ma, Wenbo Tang, Tiwei Chen, Yu Hu, Xin Zhou, Chunxu Bian, Chunhong Zeng, Tao Ju, Zhongming Zeng, Baoshun Zhang. A comprehensive review of recent progress on enhancement-mode β-Ga₂O₃ FETs: Growth, devices and properties[J]. Journal of Semiconductors, 2023, 44(6): 061801

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Paper Information

Category: Articles

Received: Dec. 30, 2022

Accepted: --

Published Online: Jul. 6, 2023

The Author Email: Zhang Baoshun (bszhang2006@sinano.ac.cn)

DOI:10.1088/1674-4926/44/6/061801

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