[1] Hu Xinwen, Karmarkar A P, Jun B et al. Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors[J]. IEEE Transactions on Nuclear Science, 50, 1791-1796(2003).

[2] [2] Carbone M, Hirche K, M S, et al. An overview of GaN FET technology, reliability, radiation market f future space application[C]2019 European Space Power Conference (ESPC). 2019: 14.

[3] [3] Shen Zicai. Space radiation environmental engineering[M]. Beijing: China Aerospace Press, 2013

[4] Kim D S, Lee J H, Yeo S et al. Proton irradiation effects on AlGaN/GaN HEMTs with different isolation methods[J]. IEEE Transactions on Nuclear Science, 65, 579-582(2018).

[5] Xapsos M A, O’Neill P M, O’Brien T P. Near-earth space radiation models[J]. IEEE Transactions on Nuclear Science, 60, 1691-1705(2013).

[6] Kim H Y, Kim J, Liu Lu et al. Effects of proton irradiation energies on degradation of AlGaN/GaN high electron mobility transistors[J]. Journal of Vacuum Science & Technology B, 30, 012202(2012).

[7] Wan Xin, Baker O K, McCurdy M W et al. Low energy proton irradiation effects on commercial enhancement mode GaN HEMTs[J]. IEEE Transactions on Nuclear Science, 64, 253-257(2017).

[8] Chen Ziwen, Yue Shaozhong, Wang Jinbin et al. Proton-induced effect on AlGaN/GaN HEMTs after hydrogen treatment[J]. IEEE Transactions on Device and Materials Reliability, 21, 297-302(2021).

[9] Koehler A D, Anderson T J, Tadjer M J et al. Impact of surface passivation on the dynamic on-resistance of proton-irradiated AlGaN/GaN HEMTs[J]. IEEE Electron Device Letters, 37, 545-548(2016).

[10] Liu Lu, Hwang Y H, Xi Yuyin et al. Study on the effects of proton irradiation on the dc characteristics of AlGaN/GaN high electron mobility transistors with source field plate[J]. Journal of Vacuum Science & Technology B, 32, 022202(2014).

[11] Kim H Y, Lo C F, Liu L et al. Proton-irradiated InAlN/GaN high electron mobility transistors at 5, 10, and 15 MeV energies[J]. Applied Physics Letters, 100, 012107(2012).

[12] Hwang Y H, Li Shun, Hsieh Y L et al. Effect of proton irradiation on AlGaN/GaN high electron mobility transistor off-state drain breakdown voltage[J]. Applied Physics Letters, 104, 082106(2014).

[13] Liu Jun, Ji Qizheng, Yang Ming. Influence of proton irradiation on subthreshold swing characteristics of AlGaN/GaN HEMTs[J]. Semiconductor Materials and Devices, 48, 110-116(2023).

[14] Keum D M, Sung H K, Kim H. Degradation characteristics of normally-off p-AlGaN gate AlGaN/GaN HEMTs with 5 MeV proton irradiation[J]. IEEE Transactions on Nuclear Science, 64, 258-262(2017).

[15] Bai Ruxue, Guo Hongxia, Zhang Hong. High-energy proton radiation effect of gallium nitride power device with enhanced Cascode structure[J]. Acta Physica Sinica, 72, 012401(2023).

[16] [16] Faruk M G, Wilkins R, Dwivedi R C, et al. Proton neutron radiation effects studies of MOSFET transists f potential deepspace mission applications[C]2012 IEEE Aerospace Conference. 2012: 113.

[17] Seehra S S, Slusark W J. The Effect of operating conditions on the radiation resistance of VDMOS power FETs[J]. IEEE Transactions on Nuclear Science, 29, 1559-1563(1982).

[18] Wu Hao, Fu Xiaojun, Luo Jun et al. Total ionizing dose effects on the threshold voltage of GaN Cascode devices[J]. Micromachines, 14, 1832(2023).

[19] [19] Jiang Lilai. Computational simulation of proton irradiation effect in AlGaNGaN high mobility transists[D]. Shanghai: East China Nmal University, 2023: 3238

[20] Ahn S, Dong Chen, Zhu Weidi et al. Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors[J]. Journal of Vacuum Science & Technology B, 33, 051208(2015).