Fig. 1. Structure diagram of the TP65H035WS device and optical images of the device before and after decapsulation

Fig. 2. I-V characteristic curves of experimental devices before irradiation and flow chart of irradiation experimental condition

Fig. 3. Characteristic change curves of GaN HEMT devices before and after 5 MeV proton irradiation under different doses

Fig. 4. Electrical parameter change histogram of GaN HEMT devices after irradiation at different doses of 5 MeV proton

Fig. 5. Normalized drain current noise power spectral density S_id as a function of frequency before and after 5 MeV proton irradiation at different doses

Fig. 6. Transfer characteristic and output characteristic curves of GaN HEMT devices before and after 60 MeV and 300 MeV proton irradiation

Fig. 7. Collision events in 5 μm GaN material under different energies proton irradiation

Fig. 8. Vacancies concentrations in the GaN material created by different energy proton irradiation as a function of proton doses