Laser & Optoelectronics Progress, Volume. 60, Issue 13, 1316017(2023)
Structure and Properties of Nano-Silicon Doped Bi3.79Er0.03Yb0.18Ti2.97W0.03O12∶xSi Upconversion Phosphor
Fig. 1. XRD of BEYTW∶xSi powder sintered in air and high-purity argon atmosphere
Fig. 2. SEM images. (a)-(c) BEYTW∶xSi-Air (x=0,4,6) samples sintered in air atmosphere; (d) BEYTW∶4Si-Ar sample sintered in pure argon atmosphere
Fig. 3. High resolution power XPS spectra of BEYTW∶ 4Si samples. (a) Air; (b) pure argon
Fig. 4. Spectral test results. (a) Relationship between absorbance of the sample and wavelength; (b) relationship between (αhv)2 and photon energy
Fig. 5. (a) Upconversion fluorescence spectra and (b) fluorescence lifetime of samples prepared in air or high-purity argon atmosphere excited by 980 nm infrared light; (c) upconversion fluorescence spectra and (d) fluorescence lifetime of samples prepared in argon atmosphere with different oxygen biases
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Jinlei Zhou, Xihu Lei, Benshan Zou, Yingqiang Shen, Feng Gao. Structure and Properties of Nano-Silicon Doped Bi3.79Er0.03Yb0.18Ti2.97W0.03O12∶xSi Upconversion Phosphor[J]. Laser & Optoelectronics Progress, 2023, 60(13): 1316017
Category: Materials
Received: Nov. 24, 2022
Accepted: Feb. 16, 2023
Published Online: Jul. 14, 2023
The Author Email: Gao Feng (gaofeng@gxu.edu.cn)