Laser & Optoelectronics Progress, Volume. 60, Issue 13, 1316017(2023)
Structure and Properties of Nano-Silicon Doped Bi3.79Er0.03Yb0.18Ti2.97W0.03O12∶xSi Upconversion Phosphor
A series of Si-doped Bi3.79Er0.03Yb0.18Ti2.97W0.03O12∶xSi phosphors were prepared by high temperature solid-state sintering, and their structures and upconversion fluorescence properties were explored. The experimental and test results show that the Bi3.79Er0.03Yb0.18Ti2.97W0.03O12∶xSi phosphors prepared in different atmospheres are Bi4Ti3O12 phase with single layered perovskite like structure. Si is mainly Si4+ in the phosphor, indicating that even in the argon atmosphere, most of the doped Si is oxidized. Si doping increases the density and surface smoothness of the material, reduces the optical band gap and enhances the light absorption. Under 980 nm infrared light excitation, the upconversion emission spectra of all samples show three emission bands centered at 525 nm, 545 nm, and 765 nm, respectively, corresponding to the electronic transitions in the Er3+4f electron layer. The luminescence intensity and fluorescence lifetime of the sample doped with 6% Si mole fraction are about twice as that of the sample without doping Si, indicating that Si doping can significantly improve the photoluminescence performance of rare earth doped bismuth titanate based phosphors
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Jinlei Zhou, Xihu Lei, Benshan Zou, Yingqiang Shen, Feng Gao. Structure and Properties of Nano-Silicon Doped Bi3.79Er0.03Yb0.18Ti2.97W0.03O12∶xSi Upconversion Phosphor[J]. Laser & Optoelectronics Progress, 2023, 60(13): 1316017
Category: Materials
Received: Nov. 24, 2022
Accepted: Feb. 16, 2023
Published Online: Jul. 14, 2023
The Author Email: Gao Feng (gaofeng@gxu.edu.cn)