[1] S Taking, D Macfarlance, E Wasige. IEEE Electron Dev. Lett., 58, 1418(2011).

[2] B Hou, X H Ma, L Yang, J J Zhu, Q Zhu, L X Chen, M H Mi, H S Zhang, M Zhang, P Zhang, X W Zhou, Y Hao. Appl. Phys. Express, 10(2017).

[3] X F Zheng, A C Wang, X H Hou, Y Z Wang, H Y Wen, C Wang, Y Lu, W Mao, X H Ma, Y Hao. Chin. Phys. Lett., 34(2017).

[4] S Khandelwal, N Goyal, T A Fjeldly. IEEE Electron Dev. Lett., 58, 3622(2011).

[5] J W Roberts, P R Chalker, K B Lee, P A Houston, S J Cho, I G Thayne, I Guiney, D Wallis, C J Humphreys. Appl. Phys. Lett., 108(2016).

[6] B Hou, X H Ma, J J Zhu, L Yang, W W Chen, M H Mi, Q Zhu, L X Chen, R Zhang, M Zhang, X W Zhou, Y Hao. IEEE Electron Dev. Lett., 39, 397(2018).

[7] K Mochizuki, T Mishima, A Terano, N Kaneda, T Ishigaki, T Tsuchiya. IEEE Trans. Electron. Dev., 58, 1979(2011).

[8] Z H Liu, G I Ng, S Arulkumaran, Y K T Maung, K L Teo, S C Foo, V Sahmugan-athan. Appl. Phys. Lett., 95(2009).

[9] X H Ma, J J Zhu, X Y Liao, T Yue, W W Chen, Y Hao. Appl. Phys. Lett., 103(2013).

[10] Q Zhou, L Liu, A B Zhang, B W Chen, Y Jin, Y Y Shi, Z H Wang, W J Chen, B Zhang. IEEE Electron Dev. Lett., 37, 165(2016).

[11] F Sang, M J Wang, M Tao, S F Liu, M Yu, B Xie, C P Wen, J Y Wang, W G Wu, Y L Hao, B Shen. Appl. Phys. Express, 9(2016).

[12] J J Zhu, Q Zhu, L X Chen, B Hou, L Yang, X W Zhou, X H Ma, Y Hao. IEEE Trans. Electron. Dev., 64, 840(2017).

[13] M J Wang, Y Wang, C Zhang, B Xie, C P Wen, J Y Wang, Y L Hao, W G Wu, K J Chen, B Shen. IEEE Trans. Electron. Dev., 61, 2035(2014).

[14] D M Fleetwood, P S Winokur, J R A Reber, T L Meisenheimer, J R Schwank, M R Shaneyfelt, L C Riewe. J. Appl. Phys., 73, 5058(1993).

[15] S Ogawa, M Shimaya, N Shiono. J. Appl. Phys., 77, 1137(1995).

[16] J J Zhu, X H Ma, B Hou, M Ma, Q Zhu, L X Chen, L Yang, P Zhang, X W Zhou, Y Hao. IEEE Trans. Electron. Dev., 65, 5343(2018).

[17] S Yang, Z K Tang, K Y Wong, Y S Lin, C Liu, Y Y Lu, S Huang, K J Chen. IEEE Electron Dev. Lett., 34, 1497(2013).

[18] T Partida-Manzanera, Z H Zaid, J W Roberts, S B Dolmanan, K B Lee, P A Houston, P R Chalker, S Tripathy, R J Potter. J. Appl. Phys., 126(2019).

[19] J J Zhu, M Ma, Q Zhu, B Hou, L X Chen, L Yang, X W Zhou, X H Ma, Y Hao, 135(2018).

[20] J J Zhu, Y C Zhang, X H Ma, S Y Liu, S Q Jing, Q Zhu, M H Mi, B Hou, L Yang, M J Uren, M Kuball, Y Hao. Semiconductor Science and Technology, 35(2020).

[21] H Sun, M J Wang, R Y Yin, J G Chen, S Xue, J S Luo, Y L Hao, D M Chen. IEEE Trans. Electron. Dev., 66, 3290(2019).

[22] H Y Wang, J Y Wang, J Q Liu, Y D He, M J Wang, M Yu, W G Wu. Solid-State Electron., 141, 13(2018).

[23] X F Zheng, S S Dong, P Ji, C Wang, Y L He, L Lv, X H Ma, Y Hao. Appl. Phys. Lett., 112(2018).

[24] S H Liu, S Yang, Z K Tang, Q M Jiang, C Liu, M J Wang, B Shen, K J Chen. Appl. Phys. Lett., 106(2015).

[25] X Y Qin, A Lucero, A Azcatl, J Kim, R M Wallace. Appl. Phys. Lett., 105(2014).

[26] X Y Zhou, Y J Lv, X Tan, Y G Wang, X B Song, Z Z He, Z R Zhang, Q B Liu, T T Han, Y L Fang, Z H Feng. Acta Phys. Sin., 67(2018).

[27] S Q G W Bao, X H Ma, W W Chen, L Yang, B Hou, Q Zhu, J J Zhu, Y Hao. Chin. Phys. Lett, 28(2019).

[28] Z Shen, L He, G L Zhou, Y Yao, F Yang, Y Q Ni, Y Zheng, D Q Zhou, J P Ao, B J Zhang, Y Liu. Phys. Status Solidi, 213, 2693(2016).

[29] Z Yatabe, Y Hori, W C Ma, J T Asubar, M Akazawa, T Sato, T Hashizume. J. Appl. Phys., 53(2014).