Chinese Physics B, Volume. 29, Issue 10, (2020)
Interface and border trapping effects in normally-off Al2O3/AlGaN/GaN MOS-HEMTs with different post-etch surface treatments
Fig. 1. Schematic cross section of recess-gate Al2O3/AlGaN/GaN MOS-HEMTs.
Fig. 2. (a)-(b) Cross-sectional TEM micrographs of recess-gate Al2O3/AlGaN/GaN MOSHEMTs and (c)–(d) the enlarged view at Al2O3/GaN interface: (a) sample 1# with DCIO and wet etch post-etch surface treatment and (b) the controlled sample 2#.
Fig. 3. Influence of post-etch surface treatment on normally-off Al2O3/AlGaN/GaN MOS-HEMTs in terms of (a) transfer and transconductance characteristics and (b) breakdown characteristics.
Fig. 4. Sequential
Fig. 5. Voltage shift due to (a) interface traps and (b) border traps as a function of program voltage for normally-off Al2O3/AlGaN/GaN MOS-HEMTs.
Fig. 6. (a) Typical photo-assisted
Fig. 7. State density distribution of border traps in normally-off MOS-HEMTs with and without DCIO treatment and wet etch.
Get Citation
Copy Citation Text
Si-Qi Jing, Xiao-Hua Ma, Jie-Jie Zhu, Xin-Chuang Zhang, Si-Yu Liu, Qing Zhu, Yue Hao. Interface and border trapping effects in normally-off Al2O3/AlGaN/GaN MOS-HEMTs with different post-etch surface treatments[J]. Chinese Physics B, 2020, 29(10):
Received: Apr. 24, 2020
Accepted: --
Published Online: Apr. 21, 2021
The Author Email: Zhu Jie-Jie (jjzhu@mail.xidian.edu.cn)