Chinese Physics B, Volume. 29, Issue 10, (2020)

Interface and border trapping effects in normally-off Al2O3/AlGaN/GaN MOS-HEMTs with different post-etch surface treatments

Si-Qi Jing1...2, Xiao-Hua Ma2, Jie-Jie Zhu1,2,†, Xin-Chuang Zhang1,2, Si-Yu Liu1,2, Qing Zhu1,2 and Yue Hao2 |Show fewer author(s)
Author Affiliations
  • 1School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 7007, China
  • 2Key Laboratory of Wide Bandgap Semiconductor Technology, Xidian University, Xi’an 710071, China
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    Figures & Tables(7)
    Schematic cross section of recess-gate Al2O3/AlGaN/GaN MOS-HEMTs.
    (a)-(b) Cross-sectional TEM micrographs of recess-gate Al2O3/AlGaN/GaN MOSHEMTs and (c)–(d) the enlarged view at Al2O3/GaN interface: (a) sample 1# with DCIO and wet etch post-etch surface treatment and (b) the controlled sample 2#.
    Influence of post-etch surface treatment on normally-off Al2O3/AlGaN/GaN MOS-HEMTs in terms of (a) transfer and transconductance characteristics and (b) breakdown characteristics.
    Sequential C–V hysteresis curves of Al2O3/AlGaN/GaN MOS-HEMTs (a) without and (b) with DCIO treatment and wet etch.
    Voltage shift due to (a) interface traps and (b) border traps as a function of program voltage for normally-off Al2O3/AlGaN/GaN MOS-HEMTs.
    (a) Typical photo-assisted C–V characteristics of normally-off MOS-HEMTs before and after light illumination with different wavelength. (b) Gate voltage at C = 150 nF/cm2 as a function of wavelength varying from 500 nm to 360 nm. The lower and upper dashed lines for each device show the reference voltage level under dark before and after trap filling.
    State density distribution of border traps in normally-off MOS-HEMTs with and without DCIO treatment and wet etch.
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    Si-Qi Jing, Xiao-Hua Ma, Jie-Jie Zhu, Xin-Chuang Zhang, Si-Yu Liu, Qing Zhu, Yue Hao. Interface and border trapping effects in normally-off Al2O3/AlGaN/GaN MOS-HEMTs with different post-etch surface treatments[J]. Chinese Physics B, 2020, 29(10):

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    Paper Information

    Received: Apr. 24, 2020

    Accepted: --

    Published Online: Apr. 21, 2021

    The Author Email: Zhu Jie-Jie (jjzhu@mail.xidian.edu.cn)

    DOI:10.1088/1674-1056/ab99bb

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