Infrared and Laser Engineering, Volume. 53, Issue 1, 20230475(2024)
Research on fine characterization technology of key parameters of line width of Si/SiO2 multilayer film
Fig. 1. Process diagram for preparing standard line width samples
Fig. 2. Nanometer value traceability system
Fig. 3. Selection of grating pitch
Fig. 4. (a) Schematic diagram of line edge; (b) Schematic diagram of local line width
Fig. 5. (a)
Fig. 6. The SEM magnification is
Fig. 7. SEM calibration factor junction error bars under different magnifications
Fig. 8. (a) Simulation pattern of linewidth standard; (b) Central line width extraction map; (c) Schematic diagram of central linewidth extraction
Fig. 9. (a)-(c) are the measurement results of 100 nm, 200 nm, and 500 nm linewidth at different magnifications, respectively; (d) Average line width
Fig. 10. (a)-(c) are 100 nm, 200 nm, 500 nm left and right line edge roughness and line width roughness respectively
|
|
|
Get Citation
Copy Citation Text
Xiaoyao Chu, Yaoqiong Shen, Liqin Liu, Wenzhe Zou, Yuqing Guan, Chuangwei Guo, Yujie Zhang, Lijie Liang, Ming Kong, Lihua Lei. Research on fine characterization technology of key parameters of line width of Si/SiO2 multilayer film[J]. Infrared and Laser Engineering, 2024, 53(1): 20230475
Category:
Received: Aug. 2, 2023
Accepted: --
Published Online: Mar. 19, 2024
The Author Email: Lei Lihua (leilh@simt.com.cn)