Infrared and Laser Engineering, Volume. 53, Issue 1, 20230475(2024)

Research on fine characterization technology of key parameters of line width of Si/SiO2 multilayer film

Xiaoyao Chu1,2,3, Yaoqiong Shen2,3, Liqin Liu2,3, Wenzhe Zou2,3, Yuqing Guan2,3, Chuangwei Guo2,3, Yujie Zhang2,3, Lijie Liang1,2,3, Ming Kong1, and Lihua Lei2,3、*
Author Affiliations
  • 1College of Metrology and Testing Engineering, China Jiliang University, Hangzhou 310018, China
  • 2Shanghai Institute of Measurement and Testing Technology, Shanghai 201203, China
  • 3Shanghai Key Laboratory of Online Testing and Control Technology, Shanghai 201203, China
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    Figures & Tables(13)
    Process diagram for preparing standard line width samples
    Nanometer value traceability system
    Selection of grating pitch
    (a) Schematic diagram of line edge; (b) Schematic diagram of local line width
    (a) \begin{document}$ {\sigma }_ {\rm{LER}} $\end{document}=0, while \begin{document}$ {\sigma }_ {\rm{LWR}} $\end{document} is large; (b) \begin{document}$ {\sigma }_ {\rm{LWR}} $\end{document} is very small, and \begin{document}$ {\sigma }_ {\rm{LER}} $\end{document} is large
    The SEM magnification is \begin{document}$ 80\;\mathrm{K}\times $\end{document}, the schematic diagram of grating grid selection
    SEM calibration factor junction error bars under different magnifications
    (a) Simulation pattern of linewidth standard; (b) Central line width extraction map; (c) Schematic diagram of central linewidth extraction
    (a)-(c) are the measurement results of 100 nm, 200 nm, and 500 nm linewidth at different magnifications, respectively; (d) Average line width
    (a)-(c) are 100 nm, 200 nm, 500 nm left and right line edge roughness and line width roughness respectively
    • Table 1. The magnification is 40, 60, 80 K× SEM measurement results (Unit: nm)

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      Table 1. The magnification is 40, 60, 80 K× SEM measurement results (Unit: nm)

      The ith measurement40 K×60 K×80 K×
      $ {L}_{1} $$ {L}_{2} $$ \overline{{L}_{i}} $$ {L}_{1} $$ {L}_{2} $$ \overline{{L}_{i}} $$ {L}_{1} $$ {L}_{2} $$ \overline{{L}_{i}} $
      i=11065.81052.11059.01061.11057.41059.31053.41063.01058.2
      i=21063.01052.11057.61053.71055.61054.71054.81054.81054.8
      i=31082.21068.51075.41061.11055.61058.41052.11057.51054.8
      i=41046.11060.31053.21064.81064.81064.81053.41054.81054.1
      i=51060.31049.31054.81074.11064.81069.51052.11054.81053.5
    • Table 2. Line width mean measurement results (Unit: nm)

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      Table 2. Line width mean measurement results (Unit: nm)

      Nominal line width40 K×60 K×80 K×Average valueAbsolute errorStandard deviation
      UpMiddleDownUpMiddleDownUpMiddleDown
      500457.1458.7454.9465.2464.1466.7453.7452.6462.3459.540.55
      200188.1190.3187.6193.8191.6197.2188.4189.0193.1191.093
      10096.397.997.499.1100.3103.698.1100.6102.899.50.52.3
    • Table 3. Measurement results of line edge LER and LWR (Unit: nm)

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      Table 3. Measurement results of line edge LER and LWR (Unit: nm)

      Lineweight valueRoughness40K×60K×80K×Average valueStandard deviation
      UpMiddleDownUpMiddleDownUpMiddleDown
      500$ {\sigma }_{L} $1.31.31.63.23.43.53.73.02.72.60.9
      $ {\sigma }_{R} $2.22.42.92.83.52.34.12.62.02.80.6
      $ {\sigma }_{LWR} $2.21.93.24.13.93.55.36.54.23.91.3
      200$ {\sigma }_{L} $1.31.51.33.32.62.73.43.03.12.50.8
      $ {\sigma }_{R} $2.61.12.92.13.51.61.71.72.72.20.7
      $ {\sigma }_{LWR} $2.41.53.24.14.22.43.94.03.73.30.9
      100$ {\sigma }_{L} $1.00.90.83.73.42.73.12.92.22.31.1
      $ {\sigma }_{R} $2.41.00.93.63.51.33.12.52.32.31.0
      $ {\sigma }_{LWR} $1.70.81.04.83.92.34.04.12.82.81.4
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    Xiaoyao Chu, Yaoqiong Shen, Liqin Liu, Wenzhe Zou, Yuqing Guan, Chuangwei Guo, Yujie Zhang, Lijie Liang, Ming Kong, Lihua Lei. Research on fine characterization technology of key parameters of line width of Si/SiO2 multilayer film[J]. Infrared and Laser Engineering, 2024, 53(1): 20230475

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    Paper Information

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    Received: Aug. 2, 2023

    Accepted: --

    Published Online: Mar. 19, 2024

    The Author Email: Lei Lihua (leilh@simt.com.cn)

    DOI:10.3788/IRLA20230475

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