Infrared and Laser Engineering, Volume. 50, Issue 8, 20210357(2021)
Analyses of light field enhancement damage induced by defects in optical thin films
Fig. 1. Schematic diagram of single-layer SiO2 film containing defects irradiated by laser
Fig. 3. Light field distribution of SiO2 film induced by defect with different refractive index
Fig. 4. Dependence of peak light field on the refractive index of defect
Fig. 5. Light field distribution of films induced by defect with different depths
Fig. 6. Light field distribution of films induced by defect with different sizes
Fig. 7. Light field distribution under laser wavelength of 355 nm (a), 532 nm (b), 1 064 nm (c)
Get Citation
Copy Citation Text
Jinhui Wu, Xiulan Ling, Ji Liu, Xin Chen. Analyses of light field enhancement damage induced by defects in optical thin films[J]. Infrared and Laser Engineering, 2021, 50(8): 20210357
Category: Photoelectric measurement
Received: Apr. 10, 2021
Accepted: --
Published Online: Nov. 2, 2021
The Author Email: